Abstract:Senze i-1550 nm insulator-based lithium tantalate waveguide enokulahlekelwa ngu-0.28 dB/cm kanye nesici sekhwalithi yeringi ye-resonator engu-1.1 million. Ukusetshenziswa kwe-χ(3) ukungahambelani kwezithombe ezingezona umugqa kuhlolisisiwe. Izinzuzo ze-lithium niobate ku-insulator (LNoI), ekhombisa izakhiwo ezinhle kakhulu ze-χ(2) kanye ne-χ(3) ezingaqondile kanye nokuvalelwa okuqinile kokubona ngenxa yesakhiwo sayo "sokuvimba", kuholele ekuthuthukisweni okukhulu kwezobuchwepheshe be-waveguide for ultrafast. ama-modulators kanye nama-photonics ahlanganisiwe angaqondile [1-3]. Ngokungeziwe ku-LN, i-lithium tantalate (LT) nayo iye yaphenywa njengezinto ezithatha izithombe ezingaqondile. Uma kuqhathaniswa ne-LN, i-LT inomkhawulo ophezulu wokulimala optical kanye nefasitela elikhanyayo elibanzi elikhanyayo [4, 5], nakuba imingcele yayo ye-optical, njenge-refractive index kanye nama-coefficients angaqondile, afana nalawo e-LN [6, 7]. Ngakho-ke, i-LToI igqama njengenye into eqinile yekhandidethi yezinhlelo zokusebenza zezithombe zamandla aphezulu ezingezona umugqa. Ngaphezu kwalokho, i-LToI isiba into eyinhloko yamadivayisi wokuhlunga we-surface acoustic wave (SAW), esebenza kubuchwepheshe beselula obunesivinini esikhulu nobungenawaya. Kulo mongo, amawafa e-LToI angase abe izinto ezisetshenziswayo ezisetshenziswa kakhulu zezithombe. Kodwa-ke, kuze kube manje, ambalwa kuphela amadivaysi e-photonic asekelwe ku-LToI abikiwe, njengama-microdisk resonators [8] kanye nama-electro-optic phase shifters [9]. Kuleli phepha, sethula i-waveguide ye-LToI elahlekelwe kancane kanye nokusetshenziswa kwayo kuyirisonator. Ukwengeza, sihlinzeka ngezici χ(3) ezingaqondile ze-LToI waveguide.
Amaphuzu Abalulekile:
• Inikeza amawafa angu-4 intshi kuya kwangu-6 intshi e-LToI, amawafa e-lithium tantalate efilimu elincanyana, anogqinsi olusuka ku-100 nm kuya ku-1500 nm, kusetshenziswa ubuchwepheshe basekhaya nezinqubo ezivuthiwe.
• I-SINOI: Amawafa efilimu amancane e-silicon nitride alahlekelwe kakhulu.
• I-SICOI: I-High-purity semi-insulating silicon carbide thin-film substrates yamasekhethi ahlanganisiwe e-silicon carbide photonic.
• I-LTOI: Iqhudelana eliqinile le-lithium niobate, ama-wafers e-lithium tantalate amafilimu amancane.
• I-LNOI: 8-intshi ye-LNOI esekela ukukhiqizwa okukhulu kwemikhiqizo ye-lithium niobate yefilimu enezinga elikhulu elincane.
Ukukhiqiza kuma-Insulator Waveguides:Kulolu cwaningo, sisebenzise amawafa angu-4-intshi e-LToI. Isendlalelo se-LT esiphezulu siyingxenye yokuhweba engu-42° ezungeziswayo ye-Y-cut LT yamadivayisi e-SAW, exhunywe ngokuqondile ku-Si substrate enongqimba lwe-thermal oxide engu-3 µm, isebenzisa inqubo yokusika ehlakaniphile. Umfanekiso 1(a) ubonisa ukubuka okuphezulu kwewafa ye-LToI, enogqinsi lwesendlalelo se-LT esiphezulu esingu-200 nm. Sihlole ubulukhuni obungaphezulu bengqimba ye-LT ephezulu sisebenzisa i-atomic force microscopy (AFM).
Umfanekiso 1.(a) Ukubuka okuphezulu kwe-wafer ye-LToI, (b) isithombe se-AFM sobuso bengqimba ye-LT ephezulu, (c) isithombe se-PFM sobuso bongqimba olungaphezulu lwe-LT, (d) Isiqephu esisiphambano esihleliwe se-waveguide ye-LToI, (e) Iphrofayili yemodi ye-TE eyisisekelo ebaliwe, kanye (f) nesithombe se-SEM sengqikithi ye-waveguide ye-LToI ngaphambi kokumiswa kwesendlalelo se-SiO2. Njengoba kukhonjisiwe kuMfanekiso 1 (b), ubulukhuni bangaphezulu bungaphansi kwe-nm engu-1, futhi akukho migqa yokuklwebha ebonwe. Ukwengeza, sihlole isimo se-polarization sengqimba ye-LT ephezulu sisebenzisa i-piezoelectric response force microscopy (PFM), njengoba kuboniswe kuMfanekiso 1 (c). Siqinisekise ukuthi i-uniform polarization yagcinwa ngisho nangemva kwenqubo yokuhlanganisa.
Sisebenzisa le substrate ye-LToI, senze i-waveguide ngendlela elandelayo. Okokuqala, isendlalelo semaski sensimbi safakwa ukuze kufakwe okomile okwalandela kwe-LT. Bese, i-electron beam (EB) lithography yenziwa ukuze kuchazwe iphethini eyinhloko ye-waveguide phezu kwesendlalelo semaski yensimbi. Okulandelayo, sidlulisele iphethini yokumelana ne-EB kungqimba yemaski yensimbi nge-etching eyomile. Ngemuva kwalokho, i-LToI waveguide core yakhiwa kusetshenziswa i-electron cyclotron resonance (ECR) etching plasma. Ekugcineni, ungqimba lwemaski yensimbi lwasuswa ngenqubo emanzi, futhi isendlalelo se-SiO2 safakwa kusetshenziswa i-plasma-enhanced chemical vapor deposition. Umfanekiso 1 (d) ubonisa isigaba esiphambene sohlelo lwe-LToI waveguide. Ingqikithi yobude obuwumgogodla, ubude bepuleti, nobubanzi obuyingqikithi ingu-200 nm, 100 nm, no-1000 nm, ngokulandelana. Qaphela ukuthi ububanzi bomgogodla bunwebeka bufike ku-3 µm onqenqemeni lwe-waveguide ukuze kuhlanganiswe i-fiber optical.
Umfanekiso 1 (e) ubonisa ukusabalalisa kwe-optical intensity okubaliwe yemodi kagesi eguqukayo eyisisekelo (TE) ku-1550 nm. Umfanekiso 1 (f) ubonisa isithombe se-electron microscope (SEM) yokuskena se-LToI waveguide core ngaphambi kokubekwa kwembondela ye-SiO2.
Izimpawu ze-Waveguide:Siqale sahlola izici zokulahleka komugqa ngokufaka ukukhanya kwe-TE-polarized kusuka ku-1550 nm wavelength okhuliswe umthombo wokuphuma okuzenzakalelayo kumagagasi we-LToI wobude obuhlukahlukene. Ukulahlekelwa kokusabalalisa kutholwe emthambekeni wobudlelwane phakathi kobude be-waveguide nokudluliswa kubude begagasi ngalinye. Ukulahlekelwa kokusabalalisa okulinganiselwe kwaba ngu-0.32, 0.28, no-0.26 dB/cm ku-1530, 1550, kanye no-1570 nm, ngokulandelana, njengoba kuboniswe kuMfanekiso 2 (a). Amagagasi e-LToI akhiwe abonise ukusebenza kokulahlekelwa okuphansi okufanayo kumagagasi we-LNoI wesimanje [10].
Okulandelayo, sihlole u-χ(3) ukungahambisani nomugqa ngokuguqulwa kwe-wavelength okukhiqizwa inqubo yokuxuba amagagasi amane. Sifaka ukukhanya kwephampu yegagasi okuqhubekayo ku-1550.0 nm nokukhanya kwesignali ku-1550.6 nm ku-12 mm ubude be-waveguide. Njengoba kuboniswe kuMfanekiso 2 (b), ukuqina kwesignali yegagasi lokukhanya kwe-phase-conjugate (idler) kukhuphuke ngamandla okufaka akhulayo. Okufakwe kumfanekiso 2 (b) kukhombisa i-spectrum evamile yokuphumayo kokuxutshwa kwamagagasi amane. Kusuka ebudlelwaneni obuphakathi kwamandla okokufaka nokusebenza kahle kokuguqulwa, silinganisele ipharamitha engaqondile (γ) ukuze icishe ibe ngu-11 W^-1m.
Umfanekiso 3.(a) Isithombe seMbonakhulu serisontha ekhiqiziwe. (b) I-spectra yokudlulisa yerisonator enamapharamitha egebe ahlukahlukene. (c) I-spectrum ka-Lorentzian kagesi elinganisiwe nefakwe i-Lorentzian yerisonator enegebe elingu-1000 nm.
Okulandelayo, senza i-LToI ring resonator futhi sahlola izici zayo. Umfanekiso 3 (a) ubonisa isithombe semakroskopu esibonakalayo serisonator ekhiqiziwe. Iringithoni ifaka ukucushwa "kwe-racetrack", ehlanganisa indawo egobile enobubanzi obungu-100 µm nendawo eqondile engu-100 µm ubude. Ububanzi begebe phakathi kweringi kanye nengqikithi ye-waveguide yebhasi buyahluka ngokunyuka okungu-200 nm, ikakhulukazi ku-800, 1000, kanye no-1200 nm. Umfanekiso wesi-3 (b) ubonisa i-spectra yokudlulisa igebe ngalinye, okubonisa ukuthi isilinganiso sokushabalala siyashintsha ngosayizi wegebe. Kulezi zibukeli, sinqume ukuthi igebe le-1000 nm lihlinzeka cishe ngezimo ezibucayi zokuhlanganisa, njengoba libonisa isilinganiso esiphezulu sokushabalala esingu -26 dB.
Sisebenzisa iresonator ehlanganiswe ngokujulile, silinganisele isici sekhwalithi (Q factor) ngokufaka i-spectrum yomugqa wokudlulisela ngejika le-Lorentzian, sathola isici sangaphakathi se-Q sezigidi ezingu-1.1, njengoba kuboniswe kuMfanekiso 3 (c). Ngokwazi kwethu, lokhu ukuboniswa kokuqala kwe-waveguide ehlanganiswe ne-LToI ring resonator. Ngokuphawulekayo, inani le-Q factor esiyizuzile liphezulu kakhulu kunalelo le-fiber-coupled LToI microdisk resonators [9].
Isiphetho:Senze i-waveguide ye-LToI ngokulahleka okungu-0.28 dB/cm ku-1550 nm kanye ne-resonator eyindandatho Q factor yezigidi ezingu-1.1. Ukusebenza okutholiwe kuqhathaniswa nalokho kwe-state-of-the-art yokulahlekelwa okuphansi kwe-LNoI waveguides. Ukwengeza, siphenye ngokungaqondile χ(3) kwe-waveguide ye-LToI ekhiqiziwe yezinhlelo zokusebenza ezingaqondile ku-chip.
Isikhathi sokuthumela: Nov-20-2024