Isifinyezo:Sithuthukise i-lithium tantalate waveguide engu-1550 nm insulator-based based insulator enokulahlekelwa okungu-0.28 dB/cm kanye ne-ring resonator quality factor engu-1.1 million. Ukusetshenziswa kwe-χ(3) nonlinearity kuma-photonics angewona umugqa kuye kwafundwa. Izinzuzo ze-lithium niobate ku-insulator (LNoI), ekhombisa izakhiwo ezinhle kakhulu ze-χ(2) kanye ne-χ(3) nonlinear kanye nokuvalelwa okuqinile kwe-optical ngenxa yesakhiwo sayo "se-insulator-on", kuholele ekuthuthukisweni okukhulu kobuchwepheshe be-waveguide bama-modulators asheshayo kanye nama-photonics ahlanganisiwe angewona umugqa [1-3]. Ngaphezu kwe-LN, i-lithium tantalate (LT) nayo ihlolwe njengento ye-photonic engewona umugqa. Uma kuqhathaniswa ne-LN, i-LT inomkhawulo womonakalo we-optical ophezulu kanye nefasitela elibanzi le-optical transparency [4, 5], yize amapharamitha ayo e-optical, njenge-refractive index kanye nama-coefficients angewona umugqa, afana nalawo e-LN [6, 7]. Ngakho-ke, i-LToI ivelele njengenye into enamandla yokukhetha izinhlelo zokusebenza ze-photonic ezingezona eziqondile ezinamandla aphezulu. Ngaphezu kwalokho, i-LToI iba yinto eyinhloko yamadivayisi okuhlunga amagagasi e-acoustic (SAW), asebenza kubuchwepheshe beselula obusheshayo kanye nobe-wireless. Kulesi simo, ama-wafer e-LToI angaba izinto ezivame kakhulu zezinhlelo zokusebenza ze-photonic. Kodwa-ke, kuze kube manje, kubikwe amadivayisi ambalwa kuphela e-photonic asekelwe ku-LToI, njenge-microdisk resonators [8] kanye nama-electro-optic phase shifters [9]. Kuleli phepha, sethula i-waveguide ye-LToI elahlekelwa kancane kanye nokusetshenziswa kwayo ku-resonator yendandatho. Ngaphezu kwalokho, sinikeza izici ze-χ(3) ezingezona eziqondile ze-waveguide ye-LToI.
Amaphuzu Ayinhloko:
• Inikeza ama-wafer e-LToI angamasentimitha angu-4 kuya kwangu-6, ama-wafer e-lithium tantalate anefilimu encane, anobukhulu obuphezulu obusukela ku-100 nm kuya ku-1500 nm, kusetshenziswa ubuchwepheshe basekhaya kanye nezinqubo ezivuthiwe.
• I-SINOI: Ama-wafer e-silicon nitride anciphile kakhulu futhi aphansi kakhulu.
• I-SICOI: Izisekelo ze-silicon carbide ezincane ezihlanzekile kakhulu ezivikela i-silicon carbide ezihlanganisiwe ze-photonic.
• I-LTOI: Umncintiswano onamandla kuma-wafer e-lithium niobate, anefilimu encane ye-lithium tantalate.
• I-LNOI: I-LNOI engamasentimitha angu-8 esekela ukukhiqizwa okukhulu kwemikhiqizo ye-lithium niobate enefilimu encane enkulu.
Ukukhiqiza kuma-Insulator Waveguides:Kulesi sifundo, sisebenzise ama-wafer e-LToI angamasentimitha angu-4. Isendlalelo se-LT esiphezulu siyi-substrate ye-LT ejikelezwe yi-Y engu-42° yamadivayisi e-SAW, ehlanganiswe ngqo ne-substrate ye-Si enesendlalelo se-thermal oxide esingu-3 µm ubukhulu, sisebenzisa inqubo yokusika ehlakaniphile. Isithombe 1(a) sibonisa umbono ophezulu we-wafer ye-LToI, enobukhulu besendlalelo se-LT esiphezulu obungu-200 nm. Sihlole ubulukhuni bomphezulu wesendlalelo se-LT esiphezulu sisebenzisa i-atomic force microscopy (AFM).
Umfanekiso 1.(a) Ukubuka okuphezulu kwe-LToI wafer, (b) Isithombe se-AFM sobuso bengqimba ephezulu ye-LT, (c) Isithombe se-PFM sobuso bengqimba ephezulu ye-LT, (d) Ingxenye ye-Schematic cross-section ye-LToI waveguide, (e) Iphrofayili yemodi ye-TE eyisisekelo ebaliwe, kanye (f) Isithombe se-SEM se-LToI waveguide core ngaphambi kokufakwa kwe-SiO2 overlayer. Njengoba kuboniswe ku-Figure 1 (b), ubulukhuni bobuso bungaphansi kwe-1 nm, futhi akukho migqa yokuklwebheka ebonwe. Ngaphezu kwalokho, sihlole isimo se-polarization sengqimba ephezulu ye-LT sisebenzisa i-piezoelectric response force microscopy (PFM), njengoba kuboniswe ku-Figure 1 (c). Siqinisekisile ukuthi i-polarization efanayo igcinwe ngisho nangemva kwenqubo yokubopha.
Sisebenzisa le substrate ye-LToI, sakha i-waveguide kanje. Okokuqala, kwafakwa ungqimba lwemaski yensimbi ukuze kuqoshwe i-LT eyomile elandelayo. Ngemuva kwalokho, kwenziwa i-lithography ye-electron beam (EB) ukuze kuchazwe iphethini ye-waveguide core phezu kwengqimba yemaski yensimbi. Okulandelayo, sadlulisela iphethini ye-EB resist kulayini wemaski yensimbi ngokuqoshwa okomile. Ngemva kwalokho, kwakhiwe i-LToI waveguide core kusetshenziswa i-electron cyclotron resonance (ECR) plasma etching. Ekugcineni, ungqimba lwemaski yensimbi lwasuswa ngenqubo emanzi, kwathi i-SiO2 overlayer yafakwa kusetshenziswa i-plasma-enhanced chemical vapor deposition. Isithombe 1 (d) sibonisa isigaba esijikelezayo se-waveguide ye-LToI. Ukuphakama okuphelele kwe-core, ukuphakama kwepuleti, kanye nobubanzi be-core kungama-200 nm, 100 nm, kanye no-1000 nm, ngokulandelana. Qaphela ukuthi ububanzi be-core bukhula bufike ku-3 µm emphethweni we-waveguide ukuze kuhlanganiswe i-optical fiber.
Isibalo 1 (e) sibonisa ukusatshalaliswa kokuqina kwe-optical okubaliwe kwemodi kagesi eguquguqukayo eyisisekelo (TE) ku-1550 nm. Isibalo 1 (f) sibonisa isithombe se-scanning electron microscope (SEM) se-LToI waveguide core ngaphambi kokufakwa kwe-overlayer ye-SiO2.
Izici ze-Waveguide:Siqale sahlola izici zokulahlekelwa okuqondile ngokufaka ukukhanya kwe-TE-polarized okuvela emthonjeni wokukhishwa okuzenzakalelayo we-wavelength ongu-1550 nm kuma-waveguide e-LToI anobude obuhlukahlukene. Ukulahleka kokusabalala kutholakale kusukela ekuthambekeni kobudlelwano phakathi kobude be-waveguide kanye nokudluliselwa ku-wavelength ngayinye. Ukulahlekelwa kokusabalala okulinganisiwe kwakuyi-0.32, 0.28, kanye ne-0.26 dB/cm ku-1530, 1550, kanye ne-1570 nm, ngokulandelana, njengoba kuboniswe kuMfanekiso 2 (a). Ama-waveguide e-LToI enziwe abonise ukusebenza okuphansi kokulahlekelwa okufana nama-waveguide e-LNoI asezingeni eliphezulu [10].
Okulandelayo, sihlole ukungalungi kwe-χ(3) ngokuguqulwa kobude be-wavelength okukhiqizwa yinqubo yokuxuba amaza amane. Sifaka ukukhanya kwephampu yamaza okuqhubekayo ku-1550.0 nm kanye nokukhanya kwesignali ku-1550.6 nm ku-waveguide engu-12 mm ubude. Njengoba kuboniswe kuMfanekiso 2 (b), ukuqina kwesignali yamaza okukhanya kwe-phase-conjugate (idler) kukhuphuke ngamandla okufaka akhulayo. I-inset kuMfanekiso 2 (b) ikhombisa i-spectrum evamile yokukhipha yokuxuba amaza amane. Kusukela ebuhlotsheni phakathi kwamandla okufaka nokusebenza kahle kokuguqula, silinganisele ukuthi ipharamitha engeyona eqondile (γ) ingaba cishe yi-11 W^-1m.
Umfanekiso 3.(a) Isithombe se-microscope se-resonator yendandatho eyenziwe. (b) Ama-spectra okudlulisa e-resonator yendandatho anemingcele ehlukahlukene yegebe. (c) I-spectra yokudlulisa elinganisiwe nefakwe i-Lorentzian ye-resonator yendandatho enegebe elingu-1000 nm.
Okulandelayo, sakha i-resonator yendandatho ye-LToI futhi sahlola izici zayo. Isithombe 3 (a) sibonisa isithombe se-optical microscope se-resonator yendandatho eyenziwe. I-resonator yendandatho inezici "zomjaho", eziqukethe indawo egobile ene-radius engu-100 µm kanye nesifunda esiqondile esingu-100 µm ubude. Ububanzi begebe phakathi kwendandatho kanye ne-bus waveguide core buyahlukahluka ngokukhula okungu-200 nm, ikakhulukazi ku-800, 1000, kanye no-1200 nm. Isithombe 3 (b) sibonisa ama-transmission spectra egebe ngalinye, okubonisa ukuthi isilinganiso sokuphela siyashintsha ngobukhulu begebe. Kusukela kula ma-spectra, sithole ukuthi igebe elingu-1000 nm linikeza izimo zokuxhuma ezicishe zibe zibucayi, njengoba libonisa isilinganiso sokuphela esiphezulu esingu--26 dB.
Sisebenzisa i-resonator ehlanganiswe ngokujulile, silinganisele i-quality factor (i-Q factor) ngokufaka i-linear transmission spectrum nge-Lorentzian curve, sathola i-Q factor yangaphakathi engu-1.1 million, njengoba kuboniswe ku-Figure 3 (c). Ngokwazi kwethu, lokhu kuwukubonakaliswa kokuqala kwe-resonator yendandatho ye-LToI ehlanganiswe nge-waveguide. Okuphawulekayo ukuthi inani le-Q factor esilifinyelele liphakeme kakhulu kunele-fiber-coupled LToI microdisk resonators [9].
Isiphetho:Sakha i-LToI waveguide enokulahlekelwa okungu-0.28 dB/cm ku-1550 nm kanye ne-ring resonator Q factor engu-1.1 million. Ukusebenza okutholiwe kufana nokwama-LNoI waveguide asezingeni eliphezulu anokulahlekelwa okuncane. Ngaphezu kwalokho, siphenye ukungalingani kwe-χ(3) kwe-LToI waveguide ekhiqizwe kwizicelo ezingezona eziqondile ezikwi-chip.
Isikhathi sokuthunyelwe: Novemba-20-2024