Izindlela eziyinhloko zokukhulisa ikristalu elilodwa le-silicon carbide zifaka i-Physical Vapor Transport (PVT), Ukukhula Kwesixazululo Esinembewu Ephezulu (TSSG), kanye Ne-High-Temperature Chemical Vapor Deposition (HT-CVD).

Phakathi kwalokhu, indlela ye-PVT isiphenduke indlela eyinhloko yokukhiqiza ezimbonini ngenxa yokusetha kwayo okokusebenza okulula, ukusebenza nokulawula kalula, kanye nezisetshenziswa eziphansi nezindleko zokusebenza.

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Amaphuzu Abalulekile Ezobuchwepheshe Okukhula Kwe-SiC Crystal Ukusebenzisa Indlela Ye-PVT

Ukukhulisa amakristalu e-silicon carbide usebenzisa indlela ye-PVT, izici ezimbalwa zobuchwepheshe kufanele zilawulwe ngokucophelela:

1. Ukuhlanzeka Kwezinto Ze-Graphite Ensimini Eshisayo
   Izinto ze-graphite ezisetshenziswa emkhakheni oshisayo wokukhula kwekristalu kumele zihlangabezane nezidingo eziqinile zokuhlanzeka. Okuqukethwe kokungcola ezingxenyeni zegraphite kufanele kube ngaphansi kuka-5×10⁻⁶, kanye nezinsimbi zokuvala zibe ngaphansi kuka-10×10⁻⁶. Ngokukhethekile, okuqukethwe kwe-boron (B) ne-aluminium (Al) kufanele kube ngaphansi kuka-0.1×10⁻⁶.

2. I-polarity elungile ye-Crystal Seed
   Idatha ye-Empirical ibonisa ukuthi i-C-face (0001) ifaneleka ekukhuleni amakristalu e-4H-SiC, kuyilapho i-Si-face (0001) ifanele ukukhula kwe-6H-SiC.

3. Ukusetshenziswa kwe-Off-Axis Seed Crystals
   Imbewu ye-off-axis ingashintsha ukulingana kokukhula, inciphise ukukhubazeka kwekristalu, futhi ikhuthaze ikhwalithi engcono yekristalu.

4. I-Reliable Seed Crystal Bonding Technique
   Ukuhlangana okufanele phakathi kwekristalu yembewu kanye nesibambi kubalulekile ukuze kube nokuzinza ngesikhathi sokukhula.

5. Ukugcina Ukuzinza Kwe-Growth Interface
   Phakathi nawo wonke umjikelezo wokukhula kwekristalu, isixhumi esibonakalayo sokukhula kufanele sihlale sizinzile ukuze kuqinisekiswe ukuthuthukiswa kwekristalu yekhwalithi ephezulu.

 

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I-Core Technologies ku-SiC Crystal Growth

1. I-Doping Technology ye-SiC Powder

I-Doping SiC powder nge-cerium (Ce) ingakwazi ukuzinzisa ukukhula kwe-polytype eyodwa njenge-4H-SiC. Ukuzijwayeza kubonise ukuthi i-Ce doping inga:

• Khulisa izinga lokukhula kwamakristalu e-SiC;

• Thuthukisa i-crystal orientation ukuze uthole ukukhula okufanayo nokuqondile;

• Nciphisa ukungcola namaphutha;

• Cindezela ukugqwala kwe-backside ye-crystal;

• Thuthukisa izinga lokukhiqiza lekristalu elilodwa.

2. Ukulawulwa kwe-Axial kanye neRadial Thermal Gradients

Izinga lokushisa le-axial lithinta i-crystal polytype nezinga lokukhula. I-gradient encane kakhulu ingaholela ekufakweni kwe-polytype kanye nokunciphisa ukuthuthwa kwezinto ezibonakalayo esigabeni somhwamuko. Ukuthuthukisa kokubili ama-axial nama-radial gradients kubalulekile ekukhuleni kwekristalu okusheshayo nokuzinzile ngekhwalithi engaguquki.

3. I-Basal Plane Dislocation (BPD) Control Technology

Ama-BPD akha ikakhulukazi ngenxa yokucindezeleka kwe-shear okudlula umkhawulo obalulekile kumakristalu e-SiC, amasistimu wokushelela asebenza. Njengoba ama-BPD e-perpendicular ekukhuleni kwawo, avame ukuvela ngesikhathi sokukhula kwekristalu nokupholisa. Ukunciphisa ukucindezeleka kwangaphakathi kunganciphisa kakhulu ukuminyana kwe-BPD.

4. I-Vapor Phase Composition Ratio Control

Ukwandisa isilinganiso se-carbon-to-silicon esigabeni somhwamuko kuyindlela efakazelwe yokuthuthukisa ukukhula kwe-polytype eyodwa. Isilinganiso esiphezulu se-C/Si sinciphisa ukunqwabelana kwe-macrostep futhi sigcine ifa elingaphezulu elivela kukristalu lwembewu, ngaleyo ndlela kucindezela ukwakheka kwama-polytypes angafuneki.

5. Amasu Okukhulisa Ingcindezi Ephansi

Ukucindezeleka ngesikhathi sokukhula kwekristalu kungase kuholele ezindizeni zamalathisi agobile, imifantu, kanye nokuminyana okuphezulu kwe-BPD. Lezi zinkinga zingadlulela kuzendlalelo ze-epitaxial futhi zibe nomthelela omubi ekusebenzeni kwedivayisi.

Amasu amaningana okunciphisa ukucindezeleka kwekristalu yangaphakathi ahlanganisa:

• Ukulungisa ukusatshalaliswa kwensimu eshisayo kanye nemingcele yokucubungula ukuze kuthuthukiswe ukukhula kokulinganisa;

• Ukuthuthukisa idizayini ye-crucible ukuvumela ikristalu ukuthi ikhule ngokukhululeka ngaphandle komgoqo wemishini;

• Ukwenza ngcono ukucushwa kwesibambi sembewu ukuze kuncishiswe ukungezwani kokukhula okushisayo phakathi kwembewu negraphite ngesikhathi sokushisa, ngokuvamile ngokushiya igebe elingu-2 mm phakathi kwembewu nesibambi;

• Ukucwenga izinqubo zokuthungatha, okuvumela ikristalu ukuthi iphole nesithando somlilo, nokulungisa izinga lokushisa nobude besikhathi ukuze kukhululeke ngokugcwele ingcindezi yangaphakathi.

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Amathrendi ku-SiC Crystal Growth Technology

1. Amasayizi Ekristalu Amakhulu
Ububanzi bekristalu eyodwa be-SiC bunyukile ukusuka kumamilimitha ambalwa ukuya ku-6-intshi, 8-intshi, ngisho namawafa angama-intshi angu-12. Amawafa amakhulu akhulisa ukusebenza kahle kokukhiqiza futhi anciphisa izindleko, kuyilapho ehlangabezana nezidingo zezinhlelo zokusebenza zedivayisi yamandla aphezulu.

2. Ikhwalithi Ephakeme Ye-Crystal
Amakristalu e-SiC ekhwalithi ephezulu abalulekile kumadivayisi asebenza kahle kakhulu. Naphezu kokuthuthukiswa okuphawulekayo, amakristalu amanje asabonisa amaphutha njengamapayipi amancane, ukuhlukaniswa, nokungcola, konke okungathunaza ukusebenza nokuthembeka kwedivayisi.

3. Ukwehliswa Kwezindleko
Ukukhiqizwa kwekristalu ye-SiC kusabiza kakhulu, kukhawulela ukutholwa okubanzi. Ukwehliswa kwezindleko ngezinqubo zokukhula ezithuthukisiwe, ukwandisa ukusebenza kahle kokukhiqiza, kanye nezindleko eziphansi zezinto ezingavuthiwe kubalulekile ekwandiseni izicelo zemakethe.

4. Intelligent Manufacturing
Ngokuthuthuka kobuhlakani bokwenziwa kanye nobuchwepheshe bedatha enkulu, ukukhula kwekristalu ye-SiC kuqhubekela kuzinqubo ezihlakaniphile, ezizenzakalelayo. Izinzwa namasistimu okulawula angaqapha futhi alungise izimo zokukhula ngesikhathi sangempela, athuthukise ukuzinza kwenqubo nokubikezela. Ukuhlaziywa kwedatha kungathuthukisa ngokwengeziwe amapharamitha wenqubo kanye nekhwalithi yekristalu.

Ukuthuthukiswa kobuchwepheshe bekhwalithi ephezulu ye-SiC single crystal ukukhula kugxile kakhulu ocwaningweni lwempahla ye-semiconductor. Njengoba ubuchwepheshe buthuthuka, izindlela zokukhula kwekristalu zizoqhubeka nokuthuthuka futhi zithuthuke, zinikeze isisekelo esiqinile sezinhlelo zokusebenza ze-SiC kumadivayisi we-elekthronikhi anezinga lokushisa eliphezulu, imvamisa ephezulu, namandla aphezulu.