Imishini Yokusika I-Laser Enemba Kakhulu Yama-SiC Wafers angu-8-Inch: Ubuchwepheshe Obuyinhloko Bokucubungula I-SiC Wafer Yesikhathi Esizayo

I-silicon carbide (i-SiC) ayiyona nje ubuchwepheshe obubalulekile bokuvikela izwe kodwa futhi iyinto ebalulekile embonini yezimoto nezamandla emhlabeni jikelele. Njengesinyathelo sokuqala esibalulekile ekucutshungulweni kwe-SiC single-crystal, ukusika i-wafer kunquma ngqo ikhwalithi yokunciphisa nokupholisha okulandelayo. Izindlela zendabuko zokusika zivame ukwethula imifantu engaphezulu nangaphansi komhlaba, okwandisa amazinga okuphuka kwe-wafer kanye nezindleko zokukhiqiza. Ngakho-ke, ukulawula umonakalo wokuqhekeka kwendawo kubalulekile ekuthuthukiseni ukukhiqizwa kwamadivayisi e-SiC.

Njengamanje, ukunqunywa kwe-SiC ingot kubhekene nezinselele ezimbili ezinkulu:

1. Ukulahleka okukhulu kwezinto ezibonakalayo ekusikeni kwendabuko kwezintambo eziningi:Ukuqina okukhulu kanye nokuqhekeka kwe-SiC kwenza kube lula ukugoba nokuqhekeka ngesikhathi sokusika, ukugaya, kanye nokupholisha. Ngokusho kwedatha ye-Infineon, ukusaha kwe-multi-wire okujwayelekile okuhambisana ne-diamond-resin-bonded multi-wire kufeza ukusetshenziswa kwezinto okungu-50% kuphela ekusikeni, kanti ukulahlekelwa okuphelele kwe-single-wafer kufinyelela ku-~250 μm ngemva kokupholisha, okushiya izinto ezincane ezingasetshenziswa.
2. Ukusebenza kahle okuphansi kanye nemijikelezo emide yokukhiqiza​:Izibalo zokukhiqiza zomhlaba wonke zibonisa ukuthi ukukhiqiza ama-wafer ayi-10,000 kusetshenziswa ukusaha okuqhutshwa ngocingo oluningi okuqhubeka amahora angama-24 kuthatha izinsuku ezingama-~273. Le ndlela idinga imishini ebanzi nezinto ezisetshenziswayo ngenkathi ikhiqiza ukujiya okuphezulu kanye nokungcola (uthuli, amanzi angcolile).

Ukuze kuxazululwe lezi zinkinga, ithimba likaProfesa uXiu Xiangqian eNyuvesi yaseNanjing lithuthukise imishini yokusika nge-laser enembayo kakhulu ye-SiC, isebenzisa ubuchwepheshe be-laser obushesha kakhulu ukunciphisa amaphutha nokukhulisa umkhiqizo. Nge-ingot ye-SiC engu-20-mm, lobu buchwepheshe buphinda kabili isivuno se-wafer uma kuqhathaniswa nokusika ngentambo kwendabuko. Ngaphezu kwalokho, ama-wafer aqoshiwe nge-laser abonisa ukufana okuphezulu kwejometri, okuvumela ukunciphisa ukujiya kube ngu-200 μm nge-wafer ngayinye nokukhulisa umkhiqizo.

Izinzuzo Eziyinhloko:

• Ukuhlolwa Nokuthuthukiswa Okuqediwe emishinini emikhulu yokulinganisa, eqinisekiswe ukuthi ingasetshenziswa ukusika ama-wafer e-SiC angama-intshi angu-4–6 kanye nama-ingot e-SiC aqhubayo angama-intshi angu-6.
• Ukusikwa kwe-ingot engamasentimitha angu-8 kusaqinisekiswa.
• Isikhathi sokusika esifushane kakhulu, umkhiqizo wonyaka ophezulu, kanye nokuthuthukiswa kwesivuno okungaphezulu kuka-50%.

I-substrate ye-XKH ye-SiC yohlobo lwe-4H-N

Amandla Emakethe:

Le mishini ikulungele ukuba yisisombululo esiyinhloko sokusika i-SiC ingot engamasentimitha angu-8, okwamanje elawulwa ukungeniswa kwempahla yaseJapan enezindleko eziphakeme kanye nemikhawulo yokuthumela kwamanye amazwe. Isidingo sasekhaya semishini yokusika/yokunciphisa nge-laser sidlula amayunithi ayi-1,000, kodwa azikho ezinye izindlela ezivuthiwe ezenziwe eShayina ezikhona. Ubuchwepheshe beNanjing University bunenani elikhulu lemakethe kanye namandla ezomnotho.

Ukuhambisana kwezinto eziningi:

Ngale kwe-SiC, imishini isekela ukucutshungulwa kwe-laser kwe-gallium nitride (GaN), i-aluminium oxide (Al₂O₃), kanye nedayimane, okwandisa ukusetshenziswa kwayo kwezimboni.

Ngokuguqula ukucutshungulwa kwe-SiC wafer, lokhu kusungula izinto ezintsha kulungisa izinkinga ezibalulekile ekukhiqizweni kwe-semiconductor ngenkathi kuhambisana nemikhuba yomhlaba wonke yezinto ezisebenza kahle nezisebenzisa amandla kahle.

Isiphetho​

Njengomholi embonini ekukhiqizweni kwe-silicon carbide (SiC), i-XKH igxile ekuhlinzekeni nge-2-12-intshi full-size SiC substrates​ (kufaka phakathi i-4H-N/SEMI-type, i-4H/6H/3C-type) eklanyelwe imikhakha ekhula kakhulu njengezimoto ezintsha zamandla (ama-NEV), isitoreji samandla se-photovoltaic (PV), kanye nokuxhumana kwe-5G. Sisebenzisa ubuchwepheshe bokusika obuphansi obuphansi be-wafer obukhulu​ kanye nobuchwepheshe bokucubungula obunembile​, sifinyelele ekukhiqizweni okukhulu kwe-8-intshi substrates kanye nokuthuthuka kubuchwepheshe bokukhula kwekristalu ye-SiC obusebenzisa ama-intshi angu-12​, kunciphisa kakhulu izindleko ze-chip ngayinye. Ukuqhubekela phambili, sizoqhubeka nokwenza ngcono izinqubo zokusika ze-laser zezinga le-ingot kanye nezinqubo zokulawula ukucindezeleka ezihlakaniphile​ ukuze siphakamise isivuno se-substrate esingu-12-intshi sibe amazinga okuncintisana emhlabeni jikelele, sinike amandla imboni yasekhaya ye-SiC ukuthi iphule ama-monopolies omhlaba wonke futhi isheshise izinhlelo zokusebenza ezikhula ngokushesha ezindaweni eziphezulu njenge-automotive-grade chips kanye ne-AI server power supply.

I-substrate ye-XKH ye-SiC yohlobo lwe-4H-N