1. Isingeniso
Naphezu kocwaningo lwamashumi eminyaka, i-heteroepitaxial 3C-SiC ekhuliswe kuma-substrate e-silicon ayikafinyeleli ikhwalithi yekristalu eyanele yezinhlelo zokusebenza ze-elekthronikhi zezimboni. Ukukhula kuvame ukwenziwa kuma-substrate e-Si(100) noma e-Si(111), ngalinye liveza izinselele ezihlukile: izindawo eziphikisana nesigaba se-(100) kanye nokuqhekeka kwe-(111). Ngenkathi amafilimu aqondiswe ku-[111] ekhombisa izici ezithembisayo njengokuncipha kobuningi bamaphutha, ukuthuthuka kokwakheka kwendawo, kanye nokucindezeleka okuphansi, ukuqondiswa okuhlukile okufana ne-(110) kanye ne-(211) kusalokhu kungafundwa kahle. Idatha ekhona iphakamisa ukuthi izimo zokukhula ezifanele zingase zibe ngokuqondene nokuqondiswa, zenze kube nzima uphenyo oluhlelekile. Okuphawulekayo ukuthi ukusetshenziswa kwama-substrate e-Si aphezulu e-Miller-index (isb., (311), (510)) kuma-heteroepitaxy e-3C-SiC akukaze kubikwe, okushiya isikhala esibalulekile socwaningo lokuhlola ngezindlela zokukhula ezincike ekuqondisweni.
2. Ukuhlola
Izendlalelo ze-3C-SiC zafakwa nge-atmospheric-pressure chemical vapor deposition (CVD) kusetshenziswa amagesi andulela i-SiH4/C3H8/H2. Izendlalelo kwakuyi-1 cm² Si wafers enezindlela ezahlukene: (100), (111), (110), (211), (311), (331), (510), (553), kanye ne-(995). Zonke i-substrates zazi-on-axis ngaphandle kwe-(100), lapho ama-wafers anqunyiwe angu-2° ahlolwe khona. Ukuhlanza kwangaphambi kokukhula kwakuhilela ukususwa kwamafutha nge-ultrasonic ku-methanol. Iphrothokholi yokukhula yayihlanganisa ukususwa kwe-native oxide ngokusebenzisa i-H2 annealing ku-1000°C, kulandelwe inqubo ejwayelekile yezinyathelo ezimbili: i-carburization imizuzu eyi-10 ku-1165°C nge-12 sccm C3H8, bese kuba yi-epitaxy imizuzu engama-60 ku-1350°C (C/Si ratio = 4) kusetshenziswa i-1.5 sccm SiH4 kanye ne-2 sccm C3H8. Ukukhula ngakunye kwakuhlanganisa izindlela ezine kuya kwezinhlanu ezahlukene ze-Si, okungenani kanye (100) i-wafer yokubhekisela.
3. Imiphumela kanye nengxoxo
Ukwakheka kwezingqimba ze-3C-SiC ezikhuliswe ezisekelweni ezahlukene ze-Si (Isithombe 1) kubonise izici zobuso ezihlukile kanye nobulukhuni. Ngokubukeka, amasampula akhuliswe ku-Si(100), (211), (311), (553), kanye no-(995) abonakala efana nesibuko, kanti amanye asukela kobisi ((331), (510)) kuya kokungacaci ((110), (111)). Izindawo ezibushelelezi kakhulu (ezibonisa isakhiwo esincane kakhulu) zitholakale ezisekelweni ze-(100)2° kanye ne-(995). Okuphawulekayo ukuthi zonke izingqimba zahlala zingenamachaphaza ngemva kokupholisa, kufaka phakathi i-3C-SiC(111) evame ukucindezelwa. Usayizi wesampula olinganiselwe kungenzeka ukuthi uvimbele ukuqhekeka, yize amanye amasampula abonise ukugoba (30-60 μm ukuphambuka kusuka maphakathi kuya emaphethelweni) okutholakala ngaphansi kwe-microscopy ye-optical ekukhulisweni okungu-1000× ngenxa yokucindezeleka okuqongelelwe kokushisa. Izendlalelo ezigobile kakhulu ezikhuliswe ku-Si(111), (211), kanye ne-(553) substrates zibonise izimo ezigobile ezibonisa ukucindezeleka kokudonsa, okudinga umsebenzi owengeziwe wokuhlola kanye nowokucabanga ukuze kuhlotshaniswe nokuma kwekristalografi.
Isithombe 1 sifingqa imiphumela ye-XRD kanye ne-AFM (ukuskena ku-20×20 μ m2) yezendlalelo ze-3C-SC ezikhuliswe kuma-substrate e-Si anezindlela ezahlukene.
Izithombe ze-atomic force microscopy (AFM) (Isithombe 2) ziqinisekisile ukubonwa kokukhanya. Amanani e-Root-mean-square (RMS) aqinisekisile izindawo ezibushelelezi kakhulu kuma-substrate (100)2° off kanye nama-substrate (995), aqukethe izakhiwo ezifana nokolweni ezinobukhulu obungama-400-800 nm ohlangothini. Isendlalelo esikhule (110) sasinzima kakhulu, kuyilapho izici ezinde kanye/noma ezifanayo ezinemingcele ebukhali ngezikhathi ezithile zavela kwezinye izindlela ((331), (510)). Ukuskena kwe-X-ray diffraction (XRD) θ-2θ (okufingqiwe kuThebula 1) kwembule i-heteroepitaxy ephumelelayo yama-substrate aphansi e-Miller-index, ngaphandle kwe-Si(110) ebonise iziqongo ezixubile ze-3C-SiC(111) kanye ne-(110) ezibonisa i-polycrystallinity. Lokhu kuhlanganiswa kokuqondisa kuye kwabikwa ngaphambilini nge-Si(110), yize ezinye izifundo zibone i-3C-SiC ekhethekile (111) eqondiswe kuyo, okuphakamisa ukuthi ukulungiswa kwesimo sokukhula kubalulekile. Kuma-Miller indices ≥5 ((510), (553), (995)), azikho iziqongo ze-XRD ezitholwe ekucushweni okujwayelekile kwe-θ-2θ njengoba lezi zindiza ezinenkomba ephezulu azihlukanisi kule geometry. Ukungabikho kweziqongo ze-3C-SiC ezinenkomba ephansi (isb., (111), (200)) kusikisela ukukhula kwe-single-crystalline, okudinga ukuthambekela kwesampula ukuze kutholakale ukuphambuka okuvela ezindizeni ezinenkomba ephansi.
Umfanekiso 2 ukhombisa ukubalwa kwe-angle yendiza ngaphakathi kwesakhiwo sekristalu se-CFC.
Ama-engeli e-crystallographic abaliwe phakathi kwezindiza ze-high-index kanye ne-low-index (Ithebula 2) abonise ukungaqondi kahle okukhulu (>10°), okuchaza ukungabikho kwawo kuma-scan ajwayelekile e-θ-2θ. Ngakho-ke ukuhlaziywa kwesibalo se-pole kwenziwa kusampula eqondiswe ku-(995) ngenxa yesimo sayo esingavamile se-granular (okungenzeka ukuthi sivela ekukhuleni kwe-columnar noma i-twinning) kanye nokungaguquguquki okuphansi. Izibalo ze-(111) pole (Isithombe 3) ezivela ku-substrate ye-Si kanye nesendlalelo se-3C-SiC zazicishe zifane, ziqinisekisa ukukhula kwe-epitaxial ngaphandle kwe-twinning. Indawo ephakathi ivele ku-χ≈15°, ihambisana ne-angle ye-theoretical (111)-(995). Izindawo ezintathu ezilingana ne-symmetry zivele ezindaweni ezilindelekile (χ=56.2°/φ=269.4°, χ=79°/φ=146.7° kanye no-33.6°), nakuba indawo ebuthakathaka engabikezelwa ku-χ=62°/φ=93.3° idinga uphenyo olwengeziwe. Ikhwalithi yekristalu, ehlolwe ngobubanzi bebala kuma-φ-scan, ibonakala ithembisa, yize kudingeka izilinganiso zejika eligobile ukuze kulinganiswe. Izibalo ze-pole zamasampula (510) kanye (553) zisazogcwaliswa ukuqinisekisa uhlobo lwazo lwe-epitaxial olucatshangelwayo.
Isithombe 3 sibonisa umdwebo we-XRD peak oqoshwe kusampula eqondiswe ku-(995), ekhombisa izindiza (111) ze-Si substrate (a) kanye nesendlalelo se-3C-SiC (b).
4. Isiphetho
Ukukhula kwe-Heteroepitaxial 3C-SiC kuphumelele kuma-orientation amaningi e-Si ngaphandle kwe-(110), okwaveza izinto ze-polycrystalline. Ama-substrate e-Si(100)2° off kanye ne-(995) akhiqize izendlalelo ezibushelelezi kakhulu (RMS <1 nm), kuyilapho i-(111), (211), kanye ne-(553) zibonise ukugoba okukhulu (30-60 μm). Ama-substrate ane-index ephezulu adinga ukuchazwa kwe-XRD okuthuthukisiwe (isb., izibalo ze-pole) ukuqinisekisa i-epitaxy ngenxa yeziqongo ze-θ-2θ ezingekho. Umsebenzi oqhubekayo uhlanganisa ukulinganisa i-rocking curve, ukuhlaziywa kokucindezeleka kwe-Raman, kanye nokwandiswa kwezinye izindawo ezine-index ephezulu ukuze kuqedwe lolu cwaningo lokuhlola.
Njengomkhiqizi ohlanganiswe ngokuqondile, i-XKH inikeza izinsizakalo zokucubungula ezenziwe ngokwezifiso zobungcweti ngephothifoliyo ephelele yezingxenye ze-silicon carbide, enikeza izinhlobo ezijwayelekile nezikhethekile kufaka phakathi i-4H/6H-N, i-4H-Semi, i-4H/6H-P, kanye ne-3C-SiC, ezitholakala ngobubanzi obusukela ku-2-intshi kuya ku-12-intshi. Ubuchwepheshe bethu obuvela ekugcineni ekukhuleni kwekristalu, ukucubungula ngokunemba, kanye nokuqinisekiswa kwekhwalithi kuqinisekisa izixazululo ezenzelwe wena ze-elekthronikhi yamandla, i-RF, kanye nezinhlelo zokusebenza ezintsha.
Isikhathi sokuthunyelwe: Agasti-08-2025