Izinto ze-semiconductor yesizukulwane sesibili Isizukulwane sesithathu

Izinto zokwakha ze-semiconductor ziye zavela ngezizukulwane ezintathu eziguqukayo:

I-1st Gen (Si/Ge) yabeka isisekelo se-electronics yesimanje,

I-2nd Gen (GaAs/InP) yephule imigoqo ye-optoelectronic kanye ne-high-frequency ukuze inike amandla inguquko yolwazi,

I-3rd Gen (SiC/GaN) manje ibhekana nezinselele zamandla nezinselele ezeqisayo zemvelo, ivumela ukungathathi hlangothi kwekhabhoni kanye nenkathi ye-6G.

Lokhu kuqhubekela phambili kuveza ukuguquguquka kwepharadigm ukusuka ekuguquguqukeni kuye kochwepheshe kwisayensi yezinto ezibonakalayo.

1. AmaSemiconductors esizukulwane sokuqala: I-Silicon (Si) ne-Germanium (Ge)

Isizinda Somlando

Ngo-1947, iBell Labs yasungula i-germanium transistor, ephawula ukuqala kwenkathi ye-semiconductor. Ngama-1950s, i-silicon kancane kancane yashintsha i-germanium njengesisekelo samasekhethi ahlanganisiwe (ICs) ngenxa yongqimba oluzinzile lwe-oxide (SiO₂) kanye neziqiwi zemvelo eziningi.

Izinto ezibonakalayo

ⅠI-Bandgap:

I-Germanium: 0.67eV (i-bandgap encane, ijwayele ukuvuza yamanje, ukusebenza okungekuhle kwezinga lokushisa eliphezulu).

I-Silicon: 1.12eV (i-bandgap engaqondile, ilungele amasekhethi anengqondo kodwa ayikwazi ukukhipha ukukhanya).

Ⅱ,Izinzuzo ze-silicone:

Ngokwemvelo yakha i-oxide yekhwalithi ephezulu (SiO₂), evumela ukwenziwa kwe-MOSFET.

Izindleko eziphansi nokuchichima komhlaba (~28% wokwakheka kwe-crustal).

Ⅲ,Imikhawulo:

Ukuhamba kwe-electron ephansi (kuphela 1500 cm²/(V·s)), okukhawulela ukusebenza kwemvamisa ephezulu.

Ukubekezelela amandla kagesi/izinga lokushisa okubuthakathaka (izinga lokushisa eliphakeme lokusebenza. ~150°C).

Izinhlelo zokusebenza ezibalulekile

Ⅰ,Izifunda Ezihlanganisiwe (ICs):

Ama-CPU, ama-memory chips (isb, i-DRAM, i-NAND) ancike ku-silicon ukuze uthole ukuminyana okuphezulu.

Isibonelo: I-Intel's 4004 (1971), i-microprocessor yokuqala yezentengiselwano, yasebenzisa ubuchwepheshe be-silicon engu-10μm.

Ⅱ,Amadivayisi Amandla:

Ama-thyristors akuqala kanye nama-MOSFET ane-voltage ephansi (isb, izinsiza zamandla ze-PC) ayesekelwe ku-silicon.

Izinselele Nokuphelelwa yisikhathi

I-Germanium yaqedwa ngenxa yokuvuza nokungaqini kokushisa. Kodwa-ke, ukulinganiselwa kwe-silicon kuma-optoelectronics nasekusetshenzisweni kwamandla aphezulu kukhuthaze ukuthuthukiswa kwama-semiconductors esizukulwane esilandelayo.

AmaSemiconductors esizukulwane sesibili: i-Gallium Arsenide (GaAs) ne-Indium Phosphide (InP)

Ingemuva Lokuthuthukiswa

Phakathi neminyaka yawo-1970-1980s, izinkambu ezisafufusa ezifana nezokuxhumana ngeselula, amanethiwekhi efiber optical, kanye nobuchwepheshe besathelayithi kwadala isidingo esicindezelayo sezinto ezisetshenziswayo ze-optoelectronic ezinemvamisa ephezulu kanye nokusebenza kahle. Lokhu kugqugquzele ukuthuthuka kwama-semiconductors e-bandgap aqondile afana ne-GaAs ne-InP.

Izinto ezibonakalayo

I-Bandgap nokusebenza kwe-Optoelectronic:

I-GaAs: 1.42eV (i-bandgap eqondile, inika amandla ukuphuma kokukhanya—ilungele ama-lasers/ama-LED).

I-InP: 1.34eV (ifanele kangcono izinhlelo zokusebenza ze-wavelength ende, isb, 1550nm fibre-optic communications).

I-Electron Mobility:

I-GaAs ifinyelela ku-8500 cm²/(V·s), i-silicon eyedlula kude (1500 cm²/(V·s)), iyenze ibe sezingeni eliphezulu ekucutshungulweni kwesiginali yebanga le-GHz.

Ukubi

lI-Brittle substrates: Kunzima ukwenza kune-silicon; Ama-wafers e-GaAs abiza i-10× ngaphezulu.

lAyikho i-oxide yomdabu: Ngokungafani ne-SiO₂ ye-silicon, i-GaAs/InP ayinawo ama-oxide azinzile, avimbela ukwakhiwa kwe-IC ephezulu.

Izinhlelo zokusebenza ezibalulekile

lI-RF Front-Ends:

Izikhulisamandla zamandla eselula (ama-PA), ama-transceiver asathelayithi (isb, ama-HEMT transistors asuselwa ku-GaAs).

lI-Optoelectronics:

Ama-Laser diode (ama-CD/DVD drives), ama-LED (red/infrared), amamojula we-fiber-optic (ama-InP lasers).

lAmaseli eSolar emkhathini:

Amaseli e-GaAs afinyelela ukusebenza kahle okungu-30% (vs. ~20% we-silicon), okubalulekile kumasathelayithi. 

lAmabhodlela Ezobuchwepheshe

Izindleko eziphezulu zivalela ama-GaAs/InP kuzinhlelo zokusebenza ezisezingeni eliphezulu, ezivimbela ekususeni ukubusa kwe-silicon kuma-logic chips.

AmaSemiconductors esizukulwane sesithathu (AmaSemiconductors e-Wide-Bandgap): I-Silicon Carbide (SiC) ne-Gallium Nitride (GaN)

Abashayeli Bezobuchwepheshe

I-Energy Revolution: Izimoto zikagesi kanye nokuhlanganiswa kwegridi yamandla avuselelekayo kudinga amadivayisi asebenza kahle kakhudlwana.

Izidingo Zemvamisa Ephakeme: I-5G yezokuxhumana kanye nezinhlelo ze-radar zidinga amafrikhwensi aphezulu kanye nokuminyana kwamandla.

Indawo Eyedlulele: I-Aerospace kanye nemishini yemoto yezimboni idinga izinto ezikwazi ukumelana nezinga lokushisa elingaphezu kuka-200°C.

Izimpawu Zempahla

Izinzuzo ze-Bandgap ebanzi:

lI-SiC: I-Bandgap engu-3.26eV, amandla enkambu kagesi ephukile angu-10× awe-silicon, ekwazi ukumelana nama-voltage angaphezu kuka-10kV.

lI-GaN: I-Bandgap engu-3.4eV, ukuhamba kwe-electron engu-2200 cm²/(V·s), ihamba phambili ekusebenzeni kwefrikhwensi ephezulu.

Ukuphatha Okushisayo:

I-Thermal conductivity ye-SiC ifinyelela ku-4.9 W/(cm·K), kangcono ngokuphindwe kathathu kune-silicon, okuyenza ifaneleke ezinhlelweni zokusebenza zamandla aphezulu.

Izinselele Zezinto ezibonakalayo

I-SiC: Ukukhula okuhamba kancane kwekristalu eyodwa kudinga amazinga okushisa angaphezu kuka-2000 ° C, okuholela ekukhubazekeni kwe-wafer nezindleko eziphezulu (i-wafer ye-SiC engu-6 intshi ibiza nge-20 × ngaphezu kwe-silicon).

I-GaN: Intula i-substrate yemvelo, ngokuvamile edinga i-heteroepitaxy ku-sapphire, i-SiC, noma i-silicon substrates, okuholela ezinkingeni zokungafani kwe-lattice.

Izinhlelo zokusebenza ezibalulekile

Amandla kagesi:

Ama-inverters e-EV (isb, i-Tesla Model 3 isebenzisa ama-SiC MOSFETs, ithuthukisa ukusebenza kahle ngo-5–10%).

Iziteshi/ama-adaptha ashaja ngokushesha (Amadivayisi e-GaN anika amandla ukushaja okusheshayo okungu-100W+ kuyilapho ehlisa usayizi ngo-50%).

Amadivayisi e-RF:

Ama-amplifiers esiteshi sesisekelo se-5G (ama-GaN-on-SiC PAs asekela ama-mmWave frequencies).

I-radar yezempi (i-GaN inikeza 5× ukuminyana kwamandla wama-GaAs).

I-Optoelectronics:

Ama-LED we-UV (izinto ze-AlGaN ezisetshenziswa ekubulaleni nasekutholeni ikhwalithi yamanzi).

Isimo Semboni kanye Nekusasa Le-Outlook

I-SiC ibusa imakethe yamandla aphezulu, enamamojula ebanga lezimoto asevele ekhiqizwa ngobuningi, nakuba izindleko zihlala ziyisithiyo.

I-GaN ikhula ngokushesha kuma-electronics abathengi (ukushaja okusheshayo) kanye nezinhlelo zokusebenza ze-RF, ishintshela kumawafa angama-intshi angu-8.

Izinto ezisafufusa ezifana ne-gallium oxide (Ga₂O₃, i-bandgap 4.8eV) nedayimane (5.5eV) zingakha “isizukulwane sesine” sama-semiconductors, aphushe imikhawulo yamandla kagesi ngaphezu kuka-20kV.

Ukuhlalisana kanye Nokubambisana Kwezizukulwane Ze-Semiconductor

Ukuphelelisana, Hhayi Ukumiselela:

I-Silicon isalokhu ihamba phambili kuma-logic chips naku-electronics abathengi (95% wemakethe ye-semiconductor yomhlaba wonke).

Ama-GaA kanye ne-InP asebenza ngokukhethekile kuma-high-frequency kanye nama-optoelectronic niches.

I-SiC/GaN ayinakushintsheka kumandla nezimboni.

Izibonelo Zokuhlanganisa Ubuchwepheshe:

I-GaN-on-Si: Ihlanganisa i-GaN nama-silicon substrates angabizi kakhulu ukuze ishaje ngokushesha kanye nezicelo ze-RF.

Amamojula ayingxube ye-SiC-IGBT: Thuthukisa ukusebenza kahle kokuguqulwa kwegridi.

Amathrendi Azayo:

Ukuhlanganiswa okuhlukahlukene: Ukuhlanganisa izinto (isb, i-Si + GaN) ku-chip eyodwa ukuze ulinganisele ukusebenza nezindleko.

Izinto ze-bandgap ezibanzi kakhulu (isb, i-Ga₂O₃, idayimane) zinganika amandla i-ultra-high-voltage (>20kV) kanye nezinhlelo zokusebenza zekhompuyutha ze-quantum.

Ukukhiqizwa okuhlobene

I-GaAs laser epitaxial wafer 4 intshi 6 amayintshi

12 inch SIC substrate silicon carbide prime grade diameter 300mm usayizi omkhulu 4H-N Ifanele idivayisi yamandla aphezulu ukuchithwa kokushisa