Izinto ze-semiconductor ziye zavela ngezizukulwane ezintathu eziguqulayo:
Isizukulwane soku-1 (i-Si/i-Ge) sabeka isisekelo sezinto zobuchwepheshe zesimanje,
Isizukulwane sesi-2 (i-GaAs/InP) sadlula ezithiyweni ze-optoelectronic kanye ne-high-frequency ukuze sinikeze amandla uguquko lolwazi,
Isizukulwane sesi-3 (i-SiC/GaN) manje sibhekana nezinselele zamandla kanye nezemvelo eziyingozi, okuvumela ukungathathi hlangothi kwekhabhoni kanye nenkathi ye-6G.
Lokhu kuqhubeka kwembula ushintsho olufana nolwendlela yokusebenza kusukela ekuguqukeni kuya ekugxileni kwesayensi yezinto ezibonakalayo.
1. Ama-Semiconductor esizukulwane sokuqala: i-Silicon (Si) kanye ne-Germanium (Ge)
Isizinda Somlando
Ngo-1947, iBell Labs yasungula i-transistor ye-germanium, okwaphawula ukuqala kwenkathi ye-semiconductor. Ngawo-1950, i-silicon yathatha indawo ye-germanium kancane kancane njengesisekelo sezifunda ezihlanganisiwe (ama-IC) ngenxa yengqimba yayo ye-oxide eqinile (i-SiO₂) kanye nezindawo zemvelo eziningi ezigciniwe.
Izakhiwo Zezinto
ⅠIgebe:
I-Germanium: 0.67eV (i-bandgap encane, ithambekele ekuvuthweni kwamandla kagesi, ukusebenza kabi kokushisa okuphezulu).
I-Silicon: 1.12eV (i-bandgap engaqondile, efanelekile kumasekethe e-logic kodwa ayikwazi ukukhipha ukukhanya).
Ⅱ、Izinzuzo ze-Silicon:
Ngokwemvelo kwakha i-oxide esezingeni eliphezulu (i-SiO₂), okuvumela ukwenziwa kwe-MOSFET.
Izindleko eziphansi kanye nomhlaba omningi (~28% wokwakheka koqweqwe).
Ⅲ、Imikhawulo:
Ukuhamba kwama-electron okuphansi (kuphela ama-cm² angu-1500/(V·s)), okunciphisa ukusebenza kwemvamisa ephezulu.
Ukubekezelelana kwamandla kagesi/kwezinga lokushisa okubuthakathaka (izinga lokushisa lokusebenza eliphezulu ~150°C).
Izinhlelo Zokusebenza Eziyinhloko
Ⅰ,Amasekethe Ahlanganisiwe (ama-IC):
Ama-CPU, ama-memory chip (isib. i-DRAM, i-NAND) athembele ku-silicon ukuze ahlanganise abantu abaningi.
Isibonelo: I-Intel's 4004 (1971), i-microprocessor yokuqala yezentengiselwano, yasebenzisa ubuchwepheshe be-silicon obuyi-10μm.
Ⅱ、Amadivayisi Amandla:
Ama-thyristors okuqala kanye nama-MOSFET ane-voltage ephansi (isb., izinsiza zikagesi ze-PC) ayesekelwe ku-silicon.
Izinselele Nokuphelelwa Yisikhathi
I-Germanium yaqedwa ngenxa yokuvuza kanye nokungazinzi kokushisa. Kodwa-ke, ukulinganiselwa kwe-silicon kuma-optoelectronics kanye nezinhlelo zokusebenza zamandla aphezulu kwakhuthaza ukuthuthukiswa kwama-semiconductors esizukulwane esilandelayo.
Ama-Semiconductor esizukulwane sesibili: i-Gallium Arsenide (GaAs) kanye ne-Indium Phosphide (InP)
Isizinda Sokuthuthukiswa
Phakathi neminyaka yama-1970-1980, amasimu avelayo njengokuxhumana kweselula, amanethiwekhi e-optical fiber, kanye nobuchwepheshe besathelayithi kwadala isidingo esikhulu sezinto ze-optoelectronic ezisebenza kahle futhi ezivame kakhulu. Lokhu kwaqhubekisela phambili ukuthuthuka kwama-semiconductors e-bandgap aqondile njenge-GaAs kanye ne-InP.
Izakhiwo Zezinto
Ukusebenza kwe-Bandgap kanye ne-Optoelectronic:
Ama-GaA: 1.42eV (i-bandgap eqondile, ivumela ukukhishwa kokukhanya—ilungele ama-laser/ama-LED).
I-InP: 1.34eV (ifaneleka kangcono izinhlelo zokusebenza ze-long wave length, isib., ukuxhumana kwe-fiber-optic okungu-1550nm).
Ukuhamba kwe-Electron:
I-GaAs ifinyelela ku-8500 cm²/(V·s), idlula kakhulu i-silicon (1500 cm²/(V·s)), okwenza ibe ngcono kakhulu ekucutshungulweni kwesignali yebanga le-GHz.
Ukungalungi
lIzithako ezithambile: Kunzima ukuzikhiqiza kune-silicon; ama-wafer e-GaAs abiza ngaphezulu ngo-10×.
lAyikho i-oxide yemvelo: Ngokungafani ne-SiO₂ ye-silicon, i-GaAs/InP ayinawo ama-oxide azinzile, okuvimbela ukwenziwa kwe-IC enobuningi obukhulu.
Izinhlelo Zokusebenza Eziyinhloko
lAma-RF Front-Ends:
Ama-amplifier kagesi eselula (ama-PA), ama-transceiver esathelayithi (isb., ama-transistors e-HEMT asekelwe ku-GaAs).
lOptoelectronics:
Ama-diode e-laser (ama-CD/ama-DVD drive), ama-LED (abomvu/ayi-infrared), amamojula e-fiber-optic (ama-InP lasers).
lAmaseli Elanga Esikhala:
Amaseli e-GaAs athola ukusebenza kahle okungu-30% (uma kuqhathaniswa no-~20% we-silicon), okubalulekile kuma-satellite.
lIzithiyo Zobuchwepheshe
Izindleko eziphezulu zivimba ama-GaAs/InP ezinhlelweni zokusebenza ezisezingeni eliphezulu, eziwavimbela ekususeni ukubusa kwe-silicon kuma-logic chips.
Ama-Semiconductors Esizukulwane Sesithathu (Ama-Semiconductors E-Wide-Bandgap): I-Silicon Carbide (SiC) kanye ne-Gallium Nitride (GaN)
Abashayeli Bobuchwepheshe
Uguquko Lwamandla: Izimoto zikagesi kanye nokuhlanganiswa kwegridi yamandla avuselelekayo kudinga amadivayisi kagesi asebenza kahle kakhulu.
Izidingo Zemvamisa Ephakeme: Izinhlelo zokuxhumana ze-5G kanye ne-radar zidinga amaza aphezulu kanye nobuningi bamandla.
Izindawo Ezibucayi: Izindiza kanye nezimoto zezimboni zidinga izinto ezikwazi ukumelana namazinga okushisa angaphezu kuka-200°C.
Izici Zezinto Ezibalulekile
Izinzuzo ze-Wide Bandgap:
lI-SiC: Igebe le-band elingu-3.26eV, ukuqhekeka kwamandla ensimu kagesi angu-10× awe-silicon, ekwazi ukumelana nama-voltage angaphezu kuka-10kV.
lI-GaN: Igebe le-bandgap elingu-3.4eV, ukuhamba kwama-electron okungu-2200 cm²/(V·s), lihamba phambili ekusebenzeni kwemvamisa ephezulu.
Ukuphathwa Kokushisa:
Ukushisa kwe-SiC kufinyelela ku-4.9 W/(cm·K), okungcono ngokuphindwe kathathu kune-silicon, okwenza kube kuhle kakhulu ekusetshenzisweni kwamandla aphezulu.
Izinselele Zezinto Ezibonakalayo
I-SiC: Ukukhula kancane kwekristalu elilodwa kudinga amazinga okushisa angaphezu kuka-2000°C, okuholela ekuphazamisekeni kwe-wafer kanye nezindleko eziphakeme (i-wafer ye-SiC engamasentimitha angu-6 ibiza kakhulu ngama-20× kune-silicon).
I-GaN: Ayinawo umugqa wemvelo, ngokuvamile idinga i-heteroepitaxy kuma-sapphire, i-SiC, noma ama-silicon substrates, okuholela ezinkingeni zokungalingani kwe-lattice.
Izinhlelo Zokusebenza Eziyinhloko
Amandla kagesi:
Ama-inverter e-EV (isb., i-Tesla Model 3 isebenzisa ama-SiC MOSFET, okuthuthukisa ukusebenza kahle ngo-5–10%).
Iziteshi/ama-adaptha okushaja okusheshayo (amadivayisi e-GaN avumela ukushaja okusheshayo okungu-100W+ ngenkathi enciphisa usayizi ngo-50%).
Amadivayisi e-RF:
Ama-amplifier kagesi esiteshini sesisekelo se-5G (ama-GaN-on-SiC PA asekela amaza e-mmWave).
I-radar yezempi (i-GaN inikeza amandla angu-5 × ubukhulu be-GaAs).
Optoelectronics:
Ama-LED e-UV (izinto ze-AlGaN ezisetshenziswa ekuhlanzeni nasekutholeni ikhwalithi yamanzi).
Isimo Semboni kanye Nombono Wesikhathi Esizayo
I-SiC ibusa imakethe enamandla amakhulu, njengoba amamojula ebanga lezimoto esevele ekhiqizwa ngobuningi, yize izindleko zisalokhu ziyisithiyo.
I-GaN ikhula ngokushesha kuma-electronics abathengi (ukushaja okusheshayo) kanye nezinhlelo zokusebenza ze-RF, ishintshela kuma-wafer angu-8-intshi.
Izinto ezivelayo njenge-gallium oxide (Ga₂O₃, i-bandgap 4.8eV) kanye nedayimane (5.5eV) zingakha “isizukulwane sesine” sama-semiconductor, zisunduza imikhawulo ye-voltage ngaphezu kuka-20kV.
Ukuhlalisana kanye Nokubambisana Kwezizukulwane Ezine-Semiconductor
Ukuhambisana, Hhayi Ukufaka Esikhundleni:
I-silicon isalokhu iyinhloko kuma-logic chips kanye nama-electronics asetshenziswa ngabathengi (95% wemakethe ye-semiconductor yomhlaba wonke).
I-GaAs kanye ne-InP zigxile kuma-niches asebenza kakhulu kanye nama-optoelectronic.
I-SiC/GaN ayinakuthathelwa indawo ekusetshenzisweni kwamandla kanye nezimboni.
Izibonelo Zokuhlanganiswa Kobuchwepheshe:
I-GaN-on-Si: Ihlanganisa i-GaN ne-silicon substrates ezishibhile ukuze ishaje ngokushesha kanye nezinhlelo zokusebenza ze-RF.
Amamojula e-SiC-IGBT hybrid: Thuthukisa ukusebenza kahle kokuguqulwa kwegridi.
Amathrendi Esikhathi Esizayo:
Ukuhlanganiswa okungafani: Ukuhlanganisa izinto (isb., i-Si + GaN) ku-chip eyodwa ukuze kulinganiswe ukusebenza kanye nezindleko.
Izinto ze-bandgap ezibanzi kakhulu (isb., i-Ga₂O₃, idayimane) zingase zivumele izinhlelo zokusebenza ze-voltage ephezulu kakhulu (>20kV) kanye ne-quantum computing.
Ukukhiqizwa okuhlobene
I-GaAs laser epitaxial wafer engu-4 intshi engu-6 intshi
I-substrate ye-SIC engu-12 intshi i-silicon carbide prime grade diameter 300mm enkulu 4H-N Ifanelekela ukushabalalisa ukushisa kwedivayisi enamandla aphezulu
Isikhathi sokuthunyelwe: Meyi-07-2025