Izinhlanganisela Zedayimane/Zethusi – Into Enkulu Elandelayo!

Kusukela ngawo-1980, ubuningi bokuhlanganiswa kwamasekethe kagesi bulokhu bukhula ngesilinganiso sonyaka esingu-1.5× noma ngokushesha. Ukuhlanganiswa okuphezulu kuholela ekuminyaneni okukhulu kwamanje kanye nokukhiqizwa kokushisa ngesikhathi sokusebenza.Uma kungahlakazeki kahle, lokhu kushisa kungabangela ukwehluleka kokushisa futhi kunciphise isikhathi sokuphila kwezingxenye zikagesi.

 

Ukuze kuhlangatshezwane nezidingo ezikhulayo zokuphathwa kokushisa, izinto zokupakisha ze-elekthronikhi ezithuthukisiwe ezinokushisa okuphezulu ziyacwaningwa futhi zithuthukiswa kabanzi.

izinto zethusi ezihlanganisiwe

 

Izinto ezihlanganisiwe zedayimane/zethusi

01 Idayimane Nethusi

 

Izinto zokupakisha zendabuko zifaka phakathi izinto zobumba, amapulasitiki, izinsimbi, kanye nama-alloy azo. Izinto zobumba ezifana ne-BeO kanye ne-AlN zibonisa ama-semiconductor afanayo e-CTE, ukuzinza okuhle kwamakhemikhali, kanye nokuqhuba ukushisa okuphakathi. Kodwa-ke, ukucubungula kwazo okuyinkimbinkimbi, izindleko eziphezulu (ikakhulukazi i-BeO enobuthi), kanye nokuqhekeka kobuthaka kunciphisa ukusetshenziswa. Ukupakisha kwepulasitiki kunikeza izindleko eziphansi, isisindo esincane, kanye nokushisa kodwa kunenkinga yokuqhuba ukushisa okungekuhle kanye nokungazinzi kokushisa okuphezulu. Izinsimbi ezihlanzekile (i-Cu, i-Ag, i-Al) zinokuqhuba ukushisa okuphezulu kodwa i-CTE eningi, kuyilapho ama-alloy (i-Cu-W, i-Cu-Mo) ehlisa ukusebenza kokushisa. Ngakho-ke, izinto zokupakisha ezintsha ezilinganisa ukuqhuba ukushisa okuphezulu kanye ne-CTE efanelekile zidingeka ngokushesha.

 

Ukuqinisa Ukushisa Okuphezulu (W/(m·K)) I-CTE (×10⁻⁶/℃) Ubuningi (g/cm³)
Idayimane 700–2000 0.9–1.7 3.52
Izinhlayiya ze-BeO 300 4.1 3.01
Izinhlayiya ze-AlN 150–250 2.69 3.26
Izinhlayiya ze-SiC 80–200 4.0 3.21
Izinhlayiya ze-B₄C 29–67 4.4 2.52
I-Boron fiber 40 ~5.0 2.6
Izinhlayiya ze-TiC 40 7.4 4.92
Izinhlayiya ze-Al₂O₃ 20–40 4.4 3.98
Amadevu e-SiC 32 3.4
Izinhlayiya ze-Si₃N₄ 28 1.44 3.18
Izinhlayiya ze-TiB₂ 25 4.6 4.5
Izinhlayiya ze-SiO₂ 1.4 <1.0 2.65

 

Idayimane, into yemvelo eqinile kakhulu eyaziwayo (Mohs 10), nayo inomumo oyingqayiziveleukuqhutshwa kokushisa (200–2200 W/(m·K)).

 impuphu encane

I-diamond micro-powder

 

Ithusi, nge ukuhanjiswa okuphezulu kokushisa/kukagesi (401 W/(m·K)), ukuguquguquka, kanye nokusebenza kahle kwezindleko, kusetshenziswa kabanzi kuma-IC.

 

Ukuhlanganisa lezi zakhiwo,idayimane/ithusi (Dia/Cu) izinhlanganisela—nge-Cu njenge-matrix kanye nedayimane njengokuqinisa—kuvela njengezinto zokuphatha ukushisa zesizukulwane esilandelayo.

 

02 Izindlela Zokwenza Okubalulekile

 

Izindlela ezivamile zokulungiselela idayimane/ithusi zifaka: i-powder metallurgy, indlela yokushisa okuphezulu kanye neyokucindezela okuphezulu, indlela yokucwilisa ngokuncibilikisa, indlela yokukhipha i-plasma sintering, indlela yokufafaza ngokubandayo, njll.

 

Ukuqhathaniswa kwezindlela ezahlukene zokulungiselela, izinqubo kanye nezakhiwo zezinhlanganisela zedayimane/zethusi ezinosayizi owodwa

Ipharamitha I-Powder Metallurgy Ukucindezela Okushisayo Kwe-Vacuum I-Spark Plasma Sintering (SPS) Izinga Lokushisa Eliphezulu Elinomfutho Ophakeme (i-HPHT) Ukufakwa Kwesifutho Esibandayo Ukuncibilika Kokungena
Uhlobo lwedayimane I-MBD8 I-HFD-D I-MBD8 I-MBD4 I-PDA I-MBD8/HHD
I-Matrix 99.8% Cu impuphu Impuphu ye-electrolytic Cu engu-99.9% 99.9% Cu impuphu I-alloy/i-Cu powder emsulwa Impuphu ye-Cu emsulwa I-Cu emsulwa ngobuningi/induku
Ukuguqulwa kwe-Interface B, Ti, Si, Cr, Zr, W, Mo
Usayizi Wezinhlayiyana (μm) 100 106–125 100–400 20–200 35–200 50–400
Ingxenye Yevolumu (%) 20–60 40–60 35–60 60–90 20–40 60–65
Izinga lokushisa (°C) 900 800–1050 880–950 1100–1300 350 1100–1300
Ukucindezela (i-MPa) 110 70 40–50 8000 3 1–4
Isikhathi (iminithi) 60 60–180 20 6–10 5–30
Ubuningi obuhlobene (%) 98.5 99.2–99.7 99.4–99.7
Ukusebenza            
Ukushisa Okuhle Kakhulu (W/(m·K)) 305 536 687 907 943

 

 

Amasu ajwayelekile we-Dia/Cu ahlanganisa:

 

(1)I-Powder Metallurgy
Ama-powder edayimane/i-Cu axubile ayahlanganiswa futhi acwebezelwe. Nakuba engabizi futhi elula, le ndlela iveza ubuningi obulinganiselwe, izakhiwo ezincane ezingalingani, kanye nobukhulu besampula obunqunyelwe.

                                                                                   Iyunithi yokuhlanza

Siyunithi yokuhlanganisa

 

 

 

(1)Izinga Lokushisa Eliphezulu Elinomfutho Ophakeme (i-HPHT)
Kusetshenziswa imishini yokucindezela ye-anvil eminingi, i-Cu encibilikisiwe ingena ema-lattice edayimane ngaphansi kwezimo ezimbi kakhulu, ikhiqize izinhlanganisela eziqinile. Kodwa-ke, i-HPHT idinga izikhunta ezibizayo futhi ayifanelekeli ukukhiqizwa ngezinga elikhulu.

 

                                                                                    Ukucindezela kwe-Cubic

 

Cukucindezela kwe-ubic

 

 

 

(1)Ukuncibilika Kokungena
I-Molten Cu ingena kuma-preform edayimane ngokufakwa kwe-pressure okusizwa yi-pressure noma okuqhutshwa yi-capillary. Ama-composites aphumelayo afinyelela ku->446 W/(m·K) thermal conductivity.

 

 

 

(2)I-Spark Plasma Sintering (SPS)
Ugesi ovunguzayo ushisa ngokushesha izimpushana ezixubile ngaphansi kwengcindezi. Nakuba usebenza kahle, ukusebenza kwe-SPS kuyawohloka kuma-fraction edayimane angaphezu kuka-65 vol%.

uhlelo lokuhlanza nge-plasma

 

Umdwebo wesimiso wesistimu yokukhipha i-plasma sintering

 

 

 

 

 

(5) Ukufakwa Kwesifutho Esibandayo
Izimpushana ziyasheshiswa futhi zibekwe phezu kwezingxenye ezingaphansi komhlaba. Le ndlela entsha ibhekene nezinselele ekulawuleni ukuqeda kobuso kanye nokuqinisekiswa kokusebenza kokushisa.

 

 

 

03 Ukuguqulwa Kwesixhumi Esibonakalayo

 

Ukuze kulungiselelwe izinto ezihlanganisiwe, ukumanzisa okuhlangene phakathi kwezingxenye kuyimfuneko edingekayo yenqubo yokuhlanganiswa kanye nesici esibalulekile esithinta isakhiwo se-interface kanye nesimo sokubopha i-interface. Isimo sokungamanzisi esixhunyanisweni esiphakathi kwedayimane ne-Cu siholela ekumelaneni okuphezulu kakhulu kokushisa kwe-interface. Ngakho-ke, kubaluleke kakhulu ukwenza ucwaningo lokuguqulwa kwe-interface phakathi kwalezi ezimbili ngezindlela ezahlukene zobuchwepheshe. Njengamanje, kunezindlela ezimbili ikakhulukazi zokuthuthukisa inkinga ye-interface phakathi kwedayimane ne-Cu matrix: (1) Ukwelashwa kokuguqulwa kwendawo yedayimane; (2) Ukwelashwa kwe-alloying ye-matrix yethusi.

Ukuhlanganiswa kwe-matrix

 

Umdwebo weskimu sokuguqulwa: (a) Ukufakwa okuqondile ebusweni bedayimane; (b) Ukuhlanganiswa kwe-matrix

 

 

 

(1) Ukuguqulwa kobuso bedayimane

 

Ukufaka izinto ezisebenzayo njenge-Mo, i-Ti, i-W kanye ne-Cr engqimbeni engaphezulu yesigaba sokuqinisa kungathuthukisa izici zokuhlangana kwedayimane, ngaleyo ndlela kuthuthukiswe ukuhanjiswa kwayo kokushisa. Ukusila kungenza izinto ezingenhla zikwazi ukusabela nekhabhoni ebusweni bedayimane ukuze kwakheke ungqimba lokuguquka kwe-carbide. Lokhu kuthuthukisa isimo sokumanzisa phakathi kwedayimane nesisekelo sensimbi, futhi ukugqoka kungavimbela isakhiwo sedayimane ekushintsheni emazingeni okushisa aphezulu.

 

 

 

(2) Ukuhlanganiswa kwe-matrix yethusi

 

Ngaphambi kokucutshungulwa kwezinto ezihlanganisiwe, ukwelashwa kokuhlanganisa kwenziwa ngethusi lensimbi, elingakhiqiza izinto ezihlanganisiwe ezine-conductivity ephezulu yokushisa. Ukufaka izinto ezisebenzayo ku-matrix yethusi akugcini nje ngokunciphisa i-Angle yokumanzisa phakathi kwedayimane nethusi, kodwa futhi kukhiqize ungqimba lwe-carbide oluqinile oluncibilikayo ku-matrix yethusi esibonakalayo sedayimane / Cu ngemuva kokusabela. Ngale ndlela, iningi lezikhala ezikhona esibonakalayo sezinto ziyaguqulwa futhi zigcwaliswe, ngaleyo ndlela kuthuthukiswe i-conductivity yokushisa.

 

04 Isiphetho

 

Izinto zokupakisha ezivamile azikwazi ukulawula ukushisa okuvela kuma-chip athuthukile. Ama-composite e-Dia/Cu, ane-CTE elungisekayo kanye nokushisa okuphezulu kakhulu, amelela ikhambi eliguqulayo lama-electronics esizukulwane esilandelayo.

 

 

 

Njengebhizinisi lobuchwepheshe obuphezulu elihlanganisa imboni kanye nokuhweba, i-XKH igxile ocwaningweni nasekuthuthukisweni nasekukhiqizweni kwezinhlanganisela zedayimane/zethusi kanye nezinhlanganisela ze-matrix zensimbi ezisebenza kahle kakhulu njenge-SiC/Al kanye ne-Gr/Cu, ihlinzeka ngezixazululo ezintsha zokuphathwa kokushisa ezinokushisa okungaphezu kuka-900W/(m·K) emikhakheni yokupakisha ngogesi, amamojula kagesi kanye nezindiza.

XKH'Izinto ezihlanganisiwe ze-laminate ezenziwe ngethusi ledayimane:

 

 

 

                                                        

 

 


Isikhathi sokuthunyelwe: Meyi-12-2025