Kungani ama-chips esimanje eshisa kakhulu

Njengoba ama-transistors e-nanoscale eshintsha ngesivinini se-gigahertz, ama-electron agijima ngezifunda futhi alahlekelwe amandla njengokushisa—ukushisa okufanayo okuzwayo lapho i-laptop noma ifoni ifudumala ngendlela engakhululekile. Ukufaka ama-transistors amaningi ku-chip kushiya isikhala esincane sokususa lokho kushisa. Esikhundleni sokusabalala ngokulinganayo nge-silicon, ukushisa kuqongelela ezindaweni ezishisayo ezingaba ngamashumi amadigri ashisa kakhulu kunezindawo ezizungezile. Ukuze kugwenywe umonakalo kanye nokulahlekelwa ukusebenza, izinhlelo zishintsha ama-CPU nama-GPU lapho amazinga okushisa enyuka.

Ububanzi benselele yokushisa

Lokho okwaqala njengomjaho wokunciphisa amandla sekuphenduke impi nokushisa kuzo zonke izinto zikagesi. Ekubalweni, ukusebenza kuqhubeka nokuphakamisa ubuningi bamandla phezulu (amaseva ngamanye angadonsa ngokulandelana kwama-kilowatts angamashumi). Ekuxhumaneni, kokubili izifunda zedijithali neze-analog zidinga amandla aphezulu e-transistor ukuze kube nezimpawu ezinamandla kanye nedatha esheshayo. Kuma-elekthronikhi kagesi, ukusebenza kahle okungcono kuya ngokuya kunqunyelwa yimikhawulo yokushisa.

Isu elihlukile: faka ukushisa ngaphakathi kwe-chip

Esikhundleni sokuvumela ukushisa kugxile, umqondo othembisayo uwukubanciphisangaphakathi kwe-chip uqobo—njengokuthela inkomishi yamanzi abilayo echibini lokubhukuda. Uma ukushisa kusatshalaliswa lapho kukhiqizwa khona, amadivayisi ashisayo ahlala epholile futhi ama-cooler avamile (ama-heat sink, amafeni, ama-liquid loops) asebenza kahle kakhulu. Lokhu kudingaizinto ezithwala ukushisa okuphezulu, ezivikela ngogesikuhlanganiswe ama-nanometer kuphela avela kuma-transistors asebenzayo ngaphandle kokuphazamisa izakhiwo zawo ezibucayi. I-candidate engalindelekile ifanelana nalokhu:idayimane.

Kungani idayimane?

Idayimane iphakathi kwabaqhubi be-thermal abangcono kakhulu abaziwayo—iphakeme kaningana kunethusi—ngenkathi futhi iyisivikelo sikagesi. Inkinga ukuhlanganiswa: izindlela zokukhula ezivamile zidinga amazinga okushisa azungeze noma angaphezu kuka-900–1000 °C, okungalimaza izifunda ezithuthukisiwe. Intuthuko yakamuva ikhombisa ukuthi i-thinidayimane elicwebezelayoamafilimu (angama-micrometer ambalwa kuphela ubukhulu) angatshalwa ku-amazinga okushisa aphansi kakhulukufanelekile kumadivayisi aqediwe.

Ama-cooler anamuhla kanye nemikhawulo yawo

Ukupholisa okujwayelekile kugxila kuma-heat sink angcono, amafeni, kanye nezinto ezisetshenziswayo. Abacwaningi bahlola nokupholisa uketshezi oluyi-microfluidic, izinto zokushintsha isigaba, ngisho nokucwilisa amaseva ezintweni ezithwala ukushisa, ezivikela ugesi. Lezi yizinyathelo ezibalulekile, kodwa zingaba zinkulu, zibize kakhulu, noma zingalingani kahle nezinto ezintsha.Kuhlanganiswe nge-3Dukwakheka kwama-chip, lapho izendlalelo eziningi ze-silicon ziziphatha “njenge-skyscraper.” Ezinqwabeni ezinjalo, zonke izendlalelo kumele zikhiphe ukushisa; ngaphandle kwalokho izindawo ezishisayo zivaleleke ngaphakathi.

Indlela yokukhulisa idayimane evumelana namadivayisi

Idayimane enekristalu elilodwa inokushisa okungavamile (≈2200–2400 W m⁻¹ K⁻¹, cishe izikhathi eziyisithupha kunezethusi). Amafilimu e-polycrystalline okulula ukuwakha angasondela kula manani uma ejiyile ngokwanele—futhi asengcono kunethusi ngisho noma enciphile. Ukufakwa komhwamuko wamakhemikhali wendabuko kusabela i-methane ne-hydrogen ekushiseni okuphezulu, kwakha ama-nanocolumn edayimane aqondile ahlangana kamuva abe ifilimu; ngaleso sikhathi ungqimba lusuke lujiyile, lucindezelekile, futhi luthambekele ekuqhekekeni.
Ukukhula kwezinga lokushisa eliphansi kudinga indlela ehlukile. Ukwehlisa ukushisa kuveza i-conductive soot esikhundleni sokuvikela idayimane.umoya-mpiloiqhubeka nokuqopha ikhabhoni engeyona idayimane, okwenza kube lulaidayimane ye-polycrystalline enkulu enohlamvu olukhulu ku-~400 °C, izinga lokushisa elihambisana namasekethe ahlanganisiwe athuthukisiwe. Okubaluleke kakhulu, inqubo ingamboza hhayi kuphela izindawo ezivundlile kodwa futhiizindonga eziseceleni, okubalulekile kumadivayisi e-3D ngokwemvelo.

Ukumelana nomngcele wokushisa (TBR): i-bottleneck ye-phonon

Ukushisa ezintweni eziqinile kuthwalwa yiama-phonen(ukudlidliza kwe-lattice okulinganiselwe). Ezindaweni ezibonakalayo, ama-phononi angabonakalisa futhi anqwabelane, adaleukumelana nomngcele wokushisa (TBR)okuvimbela ukugeleza kokushisa. Ubunjiniyela be-interface bufuna ukwehlisa i-TBR, kodwa izinketho zinqunyelwe ukuhambisana kwe-semiconductor. Kwezinye izindawo zokuhlangana, ukuxubana kungakha ukwakheka okuncanei-silicon carbide (i-SiC)ungqimba oluhambisana kangcono nama-phonon spectra kuzo zombili izinhlangothi, olusebenza “njengebhuloho” futhi lunciphisa i-TBR—ngaleyo ndlela luthuthukisa ukudluliselwa kokushisa kusuka kumadivayisi kuya kudayimane.

I-testbed: Ama-GaN HEMT (ama-transistors e-radio-frequency)

Ama-transistors e-high-electron-mobility (HEMTs) asekelwe ku-gallium nitride control current kugesi ye-2D electron futhi ayaziswa ngokusebenza okunamandla aphezulu (kufaka phakathi i-X-band ≈8–12 GHz kanye ne-W-band ≈75–110 GHz). Ngenxa yokuthi ukushisa kukhiqizwa eduze kakhulu nobuso, ayi-probe enhle kakhulu yanoma yiluphi ungqimba olusakazeka ngokushisa olungaphakathi. Lapho idayimane elincane limboza idivayisi—kufaka phakathi izindonga eziseceleni—amazinga okushisa esiteshi abonwe ehla ngo-~70 °C, kanye nokuthuthuka okukhulu kwegumbi lokushisa elinamandla aphezulu.

Idayimane ku-CMOS kanye nezitaki ze-3D

Kukhompyutha ethuthukisiwe,Ukufakwa kwe-3Dkwandisa ubuningi bokuhlanganiswa kanye nokusebenza kodwa kudala izithiyo zangaphakathi zokushisa lapho ama-cooler endabuko, angaphandle engasebenzi kahle khona. Ukuhlanganisa idayimane ne-silicon kungaphinde kukhiqize inzuzoIsendlalelo se-SiC, okunikeza isikhombikubona sokushisa sekhwalithi ephezulu.
Ukwakhiwa okukodwa okuphakanyisiwe kuyi-isikafulo sokushisa: amashidi edayimane amancane njenge-nanometer afakwe ngaphezu kwama-transistors ngaphakathi kwe-dielectric, axhunywe yiama-vias okushisa aqondile (“izinsika zokushisa”)ezenziwe ngethusi noma ngedayimane eyengeziwe. Lezi zinsika zidlulisa ukushisa kusuka kungqimba kuya kungqimba kuze kufike endaweni epholile yangaphandle. Ukulingisa okunemithwalo yemisebenzi engokoqobo kubonisa ukuthi izakhiwo ezinjalo zinganciphisa amazinga okushisa aphezulu ngokuze kufike ku-oda lobukhuluezinqwabeni zobufakazi bomqondo.

Okusalokhu kunzima

Izinselele ezibalulekile zifaka phakathi ukwenza ubuso obuphezulu bedayimaneisicaba ngokwe-athomuukuhlanganiswa okungenamthungo nezixhumanisi ezihlanganisayo kanye nama-dielectric, kanye nezinqubo zokucwenga ukuze amafilimu amancane agcine ukuhanjiswa kokushisa okuhle kakhulu ngaphandle kokucindezela isekethe engaphansi.

I-Outlook

Uma lezi zindlela ziqhubeka nokuvuthwa,ukusabalala kokushisa kwedayimane ngaphakathi kwe-chipkunganciphisa kakhulu imikhawulo yokushisa ku-CMOS, RF, kanye ne-elekthronikhi yamandla—okuvumela ukusebenza okuphezulu, ukuthembeka okukhulu, kanye nokuhlanganiswa kwe-3D okuxineneyo ngaphandle kwezijeziso ezivamile zokushisa.