I-silicon carbide substrate ihlukaniswe ngohlobo lwe-semi-insulating kanye nohlobo lwe-conductive. Njengamanje, ukucaciswa okujwayelekile kwemikhiqizo ye-semi-insulated silicon carbide substrate ingamayintshi angu-4. Emakethe ye-silicon carbide ye-conductive, ukucaciswa komkhiqizo we-substrate ojwayelekile njengamanje ngamayintshi ayi-6.
Ngenxa yezinhlelo zokusebenza ezingaphansi komfula emkhakheni we-RF, ama-substrates e-SiC afakwe kancane kanye nezinto ze-epitaxial zingaphansi kolawulo lokuthekelisa Umnyango Wezohwebo wase-US. I-Semi-insulated SiC njenge-substrate iyinto ekhethwayo ye-GaN heteroepitaxy futhi inamathemba okusebenza abalulekile emkhakheni we-microwave. Uma kuqhathaniswa nokungafani kwekristalu kwesafire 14% kanye no-Si 16.9%, ukungafani kwekristalu kwezinto ze-SiC ne-GaN kungu-3.4% kuphela. Ihambisana ne-ultra-high thermal conductivity ye-SiC, I-LED esebenza kahle kakhulu kanye ne-GaN high frequency kanye namadivayisi anamandla amakhulu ama-microwave alungiswe yiyo anezinzuzo ezinhle ku-radar, imishini ye-microwave enamandla amakhulu kanye nezinhlelo zokuxhumana ze-5G.
Ucwaningo nokuthuthukiswa kwe-semi-insulated SiC substrate bekulokhu kugxile ocwaningweni nasekuthuthukisweni kwe-SiC single crystal substrate. Kunobunzima obubili obukhulu ekukhuliseni izinto ze-Semi-insulated SiC:
I-1) Yehlisa ukungcola komnikeli okungu-N okwethulwa yi-graphite crucible, i-thermal insulation adsorption kanye ne-doping in powder;
2) Ngenkathi kuqinisekiswa ikhwalithi kanye nezakhiwo zikagesi zekristalu, kwethulwa isikhungo sezinga elijulile ukuze kunxeshezelwe ukungcola okusele kwezinga elingashoni ngomsebenzi kagesi.
Njengamanje, abakhiqizi abanamandla okukhiqiza e-SiC afakwe i-semi-insulated ikakhulukazi i-SICC Co, i-Semisic Crystal Co, i-Tanke Blue Co, i-Hebei Synlight Crystal Co., Ltd.
Ikristalu ye-SiC eqhubayo itholakala ngokujova i-nitrogen emkhathini okhulayo. I-conductive silicon carbide substrate isetshenziswa ikakhulukazi ekwenzeni amadivaysi amandla, amadivaysi e-silicon carbide ane-voltage ephezulu, yamanje ephezulu, izinga lokushisa eliphakeme, imvamisa ephezulu, ukulahleka okuphansi kanye nezinye izinzuzo eziyingqayizivele, kuzothuthukisa kakhulu ukusetshenziswa okukhona kwamandla kagesi asekelwe ku-silicon. ukusebenza kahle kokuguqulwa, kunomthelela omkhulu futhi ofinyelela kude emkhakheni wokuguqulwa kwamandla okusebenzayo. Izindawo eziyinhloko zokufaka isicelo izimoto zikagesi/izinqwaba zokushaja, amandla amasha e-photovoltaic, ezokuthutha ngololiwe, igridi ehlakaniphile nokunye. Ngenxa yokuthi umfula ophansi wemikhiqizo ye-conductive ikakhulukazi imishini yamandla ezimotweni zikagesi, i-photovoltaic nezinye izinkambu, ithemba lokufaka isicelo libanzi, futhi abakhiqizi baningi kakhulu.
I-Silicon carbide crystal type: Isakhiwo esijwayelekile se-4H crystalline silicon carbide engcono kakhulu ingahlukaniswa izigaba ezimbili, enye i-cubic silicon carbide crystal uhlobo lwesakhiwo se-sphalerite, eyaziwa ngokuthi i-3C-SiC noma i-β-SiC, kanti enye i-hexagonal. noma isakhiwo sedayimane sesakhiwo sesikhathi esikhulu, esifana ne-6H-SiC, i-4H-sic, i-15R-SiC, njll, eyaziwa ngokuthi i-α-SiC. I-3C-SiC inenzuzo yokumelana okuphezulu kumadivayisi wokukhiqiza. Kodwa-ke, ukungafani okuphezulu phakathi kwe-Si kanye ne-SiC lattice constants kanye nama-coefficients okwandisa ukushisa kungaholela enanini elikhulu lamaphutha ku-3C-SiC epitaxial layer. I-4H-SiC inamandla amakhulu ekukhiqizeni ama-MOSFET, ngoba ukukhula kwekristalu kanye nezinqubo zokukhula kongqimba lwe-epitaxial zinhle kakhulu, futhi ngokuya ngokuhamba kwama-electron, i-4H-SiC iphakeme kune-3C-SiC ne-6H-SiC, ihlinzeka ngezici ezingcono ze-microwave ze-4H. -SiC MOSFETs.
Uma kukhona ukwephulwa komthetho, susa othintana naye
Isikhathi sokuthumela: Jul-16-2024