I-substrate ye-silicon carbide ihlukaniswe ngohlobo oluyi-semi-insulation kanye nohlobo oluqhubayo. Njengamanje, incazelo ejwayelekile yemikhiqizo ye-substrate ye-silicon carbide engayi-semi-insulated ingamasentimitha angu-4. Emakethe ye-silicon carbide eqhubayo, incazelo yamanje yomkhiqizo we-substrate eyinhloko ingamasentimitha angu-6.
Ngenxa yezicelo ezingezansi ensimini ye-RF, ama-substrate e-SiC angenawo umswakama kanye nezinto ze-epitaxial zilawulwa ukuthunyelwa kwamanye amazwe yi-US Department of Commerce. I-SiC engenawo umswakama njenge-substrate iyinto ekhethwayo ye-GaN heteroepitaxy futhi inamathuba abalulekile okusetshenziswa ensimini ye-microwave. Uma kuqhathaniswa nokungafani kwekristalu kwe-sapphire engu-14% kanye ne-Si engu-16.9%, ukungafani kwekristalu kwezinto ze-SiC kanye ne-GaN kungu-3.4% kuphela. Uma kuhambisana nokushisa okuphezulu kakhulu kwe-SiC, Amadivayisi e-microwave e-LED esebenza kahle kakhulu kanye ne-GaN ephezulu kanye namandla aphezulu alungiselelwe yiyo anezinzuzo ezinkulu ku-radar, imishini ye-microwave enamandla aphezulu kanye nezinhlelo zokuxhumana ze-5G.
Ucwaningo kanye nokuthuthukiswa kwe-substrate ye-SiC engangenisi umswakama bekulokhu kugxilwe kakhulu ocwaningweni kanye nokuthuthukiswa kwe-substrate yekristalu eyodwa ye-SiC. Kunezinkinga ezimbili eziyinhloko ekukhuliseni izinto ze-SiC ezingangenisi umswakama:
1) Nciphisa ukungcola kwe-N okubangelwa yi-graphite crucible, i-thermal insulation adsorption kanye ne-doping ku-powder;
2) Ngenkathi kuqinisekiswa ikhwalithi kanye nezakhiwo zikagesi zekristalu, kwethulwa isikhungo esijulile ukuze sibuyisele ukungcola okusele kwesilinganiso esingajulile ngomsebenzi kagesi.
Njengamanje, abakhiqizi abanomthamo wokukhiqiza we-SiC ongaphansi kokushisa yi-SICC Co，Semisic Crystal Co，Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Ikristalu ye-SiC eqhubayo itholakala ngokufaka i-nitrogen emoyeni okhulayo. I-substrate ye-silicon carbide eqhubayo isetshenziswa kakhulu ekwakhiweni kwamadivayisi kagesi, amadivayisi kagesi e-silicon carbide ane-voltage ephezulu, amandla aphezulu, izinga lokushisa eliphezulu, imvamisa ephezulu, ukulahleka okuphansi kanye nezinye izinzuzo eziyingqayizivele, izothuthukisa kakhulu ukusetshenziswa okukhona kwamadivayisi kagesi asekelwe ku-silicon ukusebenza kahle kokuguqulwa kwamandla, inomthelela obalulekile futhi ofinyelela kude emkhakheni wokuguqulwa kwamandla okuphumelelayo. Izindawo eziyinhloko zokusetshenziswa yizimoto zikagesi/izinqwaba zokushaja, amandla amasha e-photovoltaic, ukuhamba kwesitimela, igridi ehlakaniphile njalo njalo. Ngenxa yokuthi imikhiqizo eqhubayo engezansi ikakhulukazi amadivayisi kagesi ezimotweni zikagesi, i-photovoltaic nakwamanye amasimu, amathuba okusetshenziswa abanzi, futhi abakhiqizi baningi kakhulu.
Uhlobo lwekristalu le-silicon carbide: Isakhiwo esijwayelekile se-silicon carbide engcono kakhulu ye-4H crystalline singahlukaniswa ngezigaba ezimbili, esinye uhlobo lwekristalu le-silicon carbide crystal lesakhiwo se-sphalerite, esaziwa ngokuthi yi-3C-SiC noma i-β-SiC, kanti esinye isakhiwo se-hexagonal noma sedayimane sesakhiwo sesikhathi esikhulu, esijwayelekile ku-6H-SiC, 4H-sic, 15R-SiC, njll., esaziwa ngokuthi yi-α-SiC. I-3C-SiC inenzuzo yokumelana okuphezulu kumadivayisi okukhiqiza. Kodwa-ke, ukungafani okuphezulu phakathi kwama-lattice constants e-Si ne-SiC kanye nama-coefficients okwandisa ukushisa kungaholela enanini elikhulu lamaphutha kungqimba lwe-epitaxial lwe-3C-SiC. I-4H-SiC inamandla amakhulu ekukhiqizeni ama-MOSFET, ngoba izinqubo zayo zokukhula kwekristalu kanye nokukhula kwezingqimba ze-epitaxial zinhle kakhulu, futhi maqondana nokuhamba kwama-electron, i-4H-SiC iphakeme kune-3C-SiC kanye ne-6H-SiC, inikeza izici ze-microwave ezingcono kuma-MOSFET e-4H-SiC.
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Isikhathi sokuthunyelwe: Julayi-16-2024