Izitsha ze-silicon carbide (SiC) ezihlanzekile kakhulu sezivele njengezinto ezifanelekile zezingxenye ezibalulekile embonini ye-semiconductor, yezindiza, kanye neyekhemikhali ngenxa yokushisa kwazo okumangalisayo, ukuzinza kwamakhemikhali, kanye namandla omshini. Njengoba kunesidingo esikhulayo samadivayisi e-ceramic asebenza kahle futhi angcoliswanga kakhulu, ukuthuthukiswa kobuchwepheshe bokulungiselela obusebenza kahle futhi obungakhula be-SiC ceramics ezihlanzekile kakhulu sekuyinto egxile ocwaningweni lomhlaba wonke. Leli phepha libuyekeza ngokuhlelekile izindlela zamanje zokulungiselela izitsha ze-SiC ezihlanzekile kakhulu, okuhlanganisa ukushiswa kabusha kwe-crystallization, ukushiswa okungenangcindezi (PS), ukucindezela okushisayo (HP), ukushiswa kwe-spark plasma (SPS), kanye nokukhiqizwa okungeziwe (AM), kugxilwe ekuxoxeni ngezindlela zokushiswa, amapharamitha abalulekile, izakhiwo zezinto, kanye nezinselele ezikhona zenqubo ngayinye.
Ukusetshenziswa kwe-SiC ceramics emasimini ezempi kanye nobunjiniyela
Njengamanje, izingxenye ze-ceramic ze-SiC ezihlanzekile kakhulu zisetshenziswa kakhulu emishinini yokukhiqiza i-silicon wafer, zihlanganyela ezinqubweni eziyinhloko ezifana ne-oxidation, i-lithography, i-etching, kanye nokufakelwa kwe-ion. Ngokuthuthuka kobuchwepheshe be-wafer, ukwanda kosayizi be-wafer sekuyinto ebalulekile. Usayizi we-wafer ojwayelekile wamanje ungama-300 mm, okufeza ibhalansi enhle phakathi kwezindleko kanye nomthamo wokukhiqiza. Kodwa-ke, kuqhutshwa uMthetho kaMoore, ukukhiqizwa okukhulu kwama-wafer angu-450 mm sekuvele ku-ajenda. Ama-wafer amakhulu ngokuvamile adinga amandla aphezulu esakhiwo ukuze amelane nokugoba nokuguqulwa, okuqhuba isidingo esikhulayo sezingxenye ze-ceramic ze-SiC ezinkulu, ezinamandla aphezulu, nezihlanzekile kakhulu. Eminyakeni yamuva nje, ukukhiqizwa okungeziwe (ukuphrinta kwe-3D), njengobuchwepheshe obusheshayo bokuphrinta obungadingi ukubumba, kubonise amandla amakhulu ekwakhiweni kwezingxenye ze-ceramic ze-SiC eziyinkimbinkimbi ngenxa yokwakhiwa kwazo kwengqimba ngengqimba kanye namakhono okuklama aguquguqukayo, okudonsela ukunaka okubanzi.
Leli phepha lizohlaziya ngokuhlelekile izindlela ezinhlanu zokulungiselela ezimele i-SiC ceramics ehlanzekile kakhulu—ukuncibilikisa kabusha i-crystallization, ukuncibilikisa okungenangcindezi, ukucindezela okushisayo, ukuncibilikisa i-spark plasma, kanye nokukhiqizwa kwezengezo—ligxile ezindleleni zazo zokuncibilikisa, amasu okwenza ngcono inqubo, izici zokusebenza kwezinto, kanye namathemba okusetshenziswa kwezimboni.
Izidingo zezinto zokusetshenziswa ze-silicon carbide ezihlanzekile kakhulu
I. Ukuhlanza kabusha i-crystallization
I-silicon carbide ephinde yasetshenziswa (RSiC) iyinto ye-SiC emsulwa kakhulu elungiselelwe ngaphandle kokusiza ekushiseni emazingeni okushisa aphezulu angu-2100–2500°C. Selokhu uFredriksson aqala ukuthola into yokuphinda isetshenziswe ngasekupheleni kwekhulu le-19, i-RSiC ithole ukunakwa okukhulu ngenxa yemingcele yayo yokusanhlamvu okuhlanzekile kanye nokungabikho kwezigaba zengilazi kanye nokungcola. Emazingeni okushisa aphezulu, i-SiC ibonisa umfutho womusi ophezulu, futhi indlela yayo yokususa ukusanhlamvu ihilela kakhulu inqubo yokuhwamuka nokufiphala: okusanhlamvu okuhle kuyahwamuka futhi kuphinde kufakwe ezindaweni zokusanhlamvu okukhulu, okukhuthaza ukukhula kwentamo kanye nokubopha okuqondile phakathi kokusanhlamvu, ngaleyo ndlela kuthuthukisa amandla ezinto ezibonakalayo.
Ngo-1990, uKriegesmann walungisa i-RSiC enobuningi obungu-79.1% esebenzisa i-slip casting ku-2200°C, lapho ingxenye evundlile ikhombisa isakhiwo esincane esakhiwe ngama-grain nama-pores aqinile. Ngemva kwalokho, uYi nabanye basebenzise i-gel casting ukulungiselela imizimba eluhlaza futhi bayishisa ku-2450°C, bathola i-RSiC ceramics enobukhulu obungu-2.53 g/cm³ kanye namandla okuguquguquka angu-55.4 MPa.
Ubuso bokuqhekeka kwe-SEM kwe-RSiC
Uma kuqhathaniswa ne-SiC ende, i-RSiC inobuningi obuphansi (cishe u-2.5 g/cm³) kanye ne-20% evulekile, okunciphisa ukusebenza kwayo ekusetshenzisweni kwamandla aphezulu. Ngakho-ke, ukuthuthukisa ubukhulu kanye nezakhiwo ze-RSiC kuye kwaba yinto ebalulekile ocwaningweni. USung nabanye baphakamise ukufaka i-silicon encibilikisiwe kuma-compact ahlanganisiwe e-carbon/β-SiC bese bephinda basebenzise amakristalu ku-2200°C, bakha ngempumelelo isakhiwo senethiwekhi esakhiwe ngama-grain amakhulu e-α-SiC. I-RSiC ephumela ekufinyeleleni ubukhulu obungu-2.7 g/cm³ kanye namandla okuguquguquka angu-134 MPa, okugcina ukuzinza okuhle kakhulu kwemishini emazingeni okushisa aphezulu.
Ukuze bathuthukise ukuminyana, uGuo nabanye basebenzise ubuchwepheshe bokungena kwe-polymer kanye ne-pyrolysis (PIP) ekwelapheni i-RSiC ngezindlela eziningi. Besebenzisa izixazululo ze-PCS/xylene kanye ne-SiC/PCS/xylene slurries njengezingenisi, ngemva kwemijikelezo ye-PIP engu-3-6, ukuminyana kwe-RSiC kwathuthukiswa kakhulu (kufika ku-2.90 g/cm³), kanye namandla ayo okugoba. Ngaphezu kwalokho, baphakamise isu elijikelezayo elihlanganisa i-PIP kanye ne-recrystallization: i-pyrolysis ku-1400°C elandelwa yi-recrystallization ku-2400°C, okususe ngempumelelo ukuvinjelwa kwezinhlayiya futhi kuncishiswe i-porosity. Izinto zokugcina ze-RSiC zithole ukuminyana okungu-2.99 g/cm³ kanye namandla okugoba angu-162.3 MPa, okubonisa ukusebenza okuvelele okuphelele.
Izithombe ze-SEM zokuvela kwesakhiwo esincane se-RSiC epholishiwe ngemuva kwemijikelezo yokufakwa kabusha kwe-polymer kanye ne-pyrolysis (PIP): I-RSiC yokuqala (A), ngemuva komjikelezo wokuqala we-PIP-recrystallization (B), kanye nangemva komjikelezo wesithathu (C)
II. Ukushisa Okungacindezeleki
Izitsha zobumba ze-silicon carbide (SiC) ezingenangcindezi zivame ukulungiswa kusetshenziswa uphuphu we-SiC ohlanzekile kakhulu, ocwengekile kakhulu njengezinto zokusetshenziswa, kanye nezinsiza ezincane zokusila ezingeziwe, futhi zisila endaweni engasebenzi kahle noma evacuum ku-1800–2150°C. Le ndlela ifaneleka ukukhiqiza izingxenye ze-ceramic ezinkulu neziyinkimbinkimbi. Kodwa-ke, njengoba i-SiC ihlanganiswe kakhulu, i-self-diffusion coefficient yayo iphansi kakhulu, okwenza ukuqina kube nzima ngaphandle kwezinsiza zokusila.
Ngokusekelwe endleleni yokusinta, ukusinta okungenangcindezi kungahlukaniswa ngezigaba ezimbili: ukusinta okungenangcindezi kwesigaba soketshezi (i-PLS-SiC) kanye nokusinta okungenangcindezi kwesimo esiqinile (i-PSS-SiC).
1.1 I-PLS-SiC (Ukuhlanza Isigaba Soketshezi)
I-PLS-SiC ivame ukushiswa ngaphansi kuka-2000°C ngokungeza cishe u-10 wt.% wezinsiza zokushiswa kwe-eutectic (njenge-Al₂O₃, i-CaO, i-MgO, i-TiO₂, kanye nama-oxide e-rare-earth RE₂O₃) ukwakha isigaba soketshezi, okukhuthaza ukuhlelwa kabusha kwezinhlayiya kanye nokudluliselwa kwesisindo ukuze kufezwe ukuqina. Le nqubo ifaneleka kuma-ceramic e-SiC esezingeni lezimboni, kodwa akukaze kube nemibiko yokuthi i-SiC ehlanzekile kakhulu itholakala ngokushiswa kwesigaba soketshezi.
1.2 I-PSS-SiC (Ukusika Okuqinile Kwesimo)
I-PSS-SiC ihilela ukuqina kwesimo esiqinile emazingeni okushisa angaphezu kuka-2000°C cishe nge-1 wt.% yezithasiselo. Le nqubo incike kakhulu ekusakazweni kwe-athomu kanye nokuhlelwa kabusha kokusanhlamvu okuqhutshwa amazinga okushisa aphezulu ukunciphisa amandla omhlaba nokufeza ukuqina. Uhlelo lwe-BC (boron-carbon) luyinhlanganisela evamile yezithasiselo, enganciphisa amandla omngcele wokusanhlamvu futhi isuse i-SiO₂ ebusweni be-SiC. Kodwa-ke, izithasiselo zendabuko ze-BC zivame ukwethula ukungcola okusele, kunciphisa ubumsulwa be-SiC.
Ngokulawula okuqukethwe okungeziwe (B 0.4 wt.%, C 1.8 wt.%) kanye nokushisisa ku-2150°C amahora angu-0.5, kutholakale izitsha ze-SiC ezihlanzekile kakhulu ezinobumsulwa obungu-99.6 wt.% kanye nobuningi obuhlobene obungu-98.4%. Isakhiwo esincane sibonise izinhlamvu zekholomu (ezinye zingaphezu kuka-450 µm ubude), ezinezimbobo ezincane emingceleni yezinhlayiya kanye nezinhlayiya ze-graphite ngaphakathi kwezinhlayiya. Izitsha ze-ceramic zibonise amandla okuguquguquka angu-443 ± 27 MPa, i-modulus enwebekayo engu-420 ± 1 GPa, kanye ne-coefficient yokwandisa ukushisa engu-3.84 × 10⁻⁶ K⁻¹ ebangeni lokushisa kwegumbi kuya ku-600°C, okubonisa ukusebenza okuhle kakhulu jikelele.
Isakhiwo esincane se-PSS-SiC: (A) Isithombe se-SEM ngemva kokupholisha kanye nokuchoma kwe-NaOH; (BD) Izithombe ze-BSD ngemva kokupholisha kanye nokuchoma
III. Ukucindezela Okushisayo
Ukucindezela okushisayo (HP) kuyindlela yokuqinisa efaka ukushisa kanye nokucindezela okukodwa ezintweni zempuphu ngesikhathi esisodwa ngaphansi kwezimo zokushisa okuphezulu kanye nokucindezela okuphezulu. Ukucindezela okuphezulu kuvimbela kakhulu ukwakheka kwama-pore futhi kunciphise ukukhula kokusanhlamvu, kuyilapho izinga lokushisa eliphezulu likhuthaza ukuhlanganiswa kokusanhlamvu kanye nokwakheka kwezakhiwo ezixineneyo, ekugcineni kukhiqize i-SiC ceramics enobukhulu obuphezulu, nobumsulwa obuphezulu. Ngenxa yemvelo yokucindezela eqondiswe kuyo, le nqubo ivame ukubangela i-anisotropy yokusanhlamvu, ethinta izakhiwo zemishini kanye nokuguguleka.
Ama-ceramic e-SiC ahlanzekile kunzima ukuwaqinisa ngaphandle kwezithasiselo, adinga ukushiswa kwengcindezi ephezulu kakhulu. UNadeau nabanye balungiselele ngempumelelo i-SiC egcwele ngokuphelele ngaphandle kwezithasiselo ku-2500°C kanye no-5000 MPa; uSun nabanye bathole izinto eziningi ze-β-SiC ezinobunzima be-Vickers obufika ku-41.5 GPa ku-25 GPa kanye no-1400°C. Besebenzisa ingcindezi ye-4 GPa, ama-ceramic e-SiC anobunzima obucishe bube ngu-98% no-99%, ubunzima be-35 GPa, kanye ne-modulus elastic ye-450 GPa kwalungiswa ku-1500°C kanye no-1900°C, ngokulandelana. I-SiC powder enobukhulu be-micron ku-5 GPa kanye no-1500°C yaveza ama-ceramic anobunzima be-31.3 GPa kanye nobuningi be-98.4%.
Nakuba le miphumela ibonisa ukuthi ukucindezela okuphezulu kakhulu kungafeza ukuqina okungenazo izithasiselo, ubunzima kanye nezindleko eziphakeme zemishini edingekayo kunciphisa ukusetshenziswa kwezimboni. Ngakho-ke, ekulungiseleleni okusebenzayo, izithasiselo ezilandelanayo noma i-powder granulation zivame ukusetshenziselwa ukuthuthukisa amandla okushayela e-sintering.
Ngokufaka i-resin ye-phenolic engu-4 wt.% njengesithasiselo kanye nesithasiselo ku-2350°C kanye no-50 MPa, kutholakale izitsha ze-SiC ceramics ezinezinga lokuminyana elingu-92% kanye nobumsulwa obungu-99.998%. Kusetshenziswa amanani aphansi esithasiselo (i-boric acid kanye ne-D-fructose) kanye nesithasiselo ku-2050°C kanye no-40 MPa, kwalungiswa i-SiC ehlanzekile kakhulu enobuningi obuhlobene >99.5% kanye nokuqukethwe kwe-B okusele okungu-556 ppm kuphela. Izithombe ze-SEM zibonise ukuthi, uma kuqhathaniswa namasampula angenangcindezi, amasampula acindezelwe ngokushisa ayenezinhlamvu ezincane, ama-pores ambalwa, kanye nobuningi obuphezulu. Amandla e-flexural ayengu-453.7 ± 44.9 MPa, kanti i-modulus ye-elastic ifinyelele ku-444.3 ± 1.1 GPa.
Ngokwandisa isikhathi sokubamba ku-1900°C, usayizi wezinhlamvu ukhuphuke kusuka ku-1.5 μm kuya ku-1.8 μm, kanye nokuqhuba kokushisa kuthuthuke kusuka ku-155 kuya ku-167 W·m⁻¹·K⁻¹, kuyilapho kuthuthukiswa ukumelana nokugqwala kwe-plasma.
Ngaphansi kwezimo zika-1850°C kanye no-30 MPa, ukucindezela okushisayo kanye nokucindezela okusheshayo okushisayo kwempuphu ye-SiC egobile kanye ne-annealed kukhiqize i-β-SiC ceramics egcwele ngokuphelele ngaphandle kwezithasiselo, enobukhulu obungu-3.2 g/cm³ kanye nokushisa okushisayo okungaphansi kuka-150–200°C kunezinqubo zendabuko. I-ceramics ibonise ubulukhuni obungu-2729 GPa, ukuqina kokuqhekeka okungu-5.25–5.30 MPa·m^1/2, kanye nokumelana okuhle kakhulu kokuqhekeka (amazinga okuqhekeka angu-9.9 × 10⁻¹⁰ s⁻¹ kanye no-3.8 × 10⁻⁹ s⁻¹ ku-1400°C/1450°C kanye no-100 MPa).
(A) Isithombe se-SEM sobuso obucwebezelisiwe; (B) Isithombe se-SEM sobuso obuqhekekile; (C, D) Isithombe se-BSD sobuso obucwebezelisiwe
Ocwaningweni lokunyathelisa lwe-3D lwe-piezoelectric ceramics, i-ceramic slurry, njengesici esiyinhloko esithonya ukwakheka nokusebenza, isibe yinto ebalulekile ngaphakathi nangaphandle. Izifundo zamanje ngokuvamile zibonisa ukuthi imingcele efana nosayizi wezinhlayiya zempuphu, i-slurry viscosity, kanye nokuqukethwe okuqinile kuthinta kakhulu ikhwalithi yokwakheka kanye nezakhiwo ze-piezoelectric zomkhiqizo wokugcina.
Ucwaningo luthole ukuthi ama-slurry e-ceramic alungiselelwe kusetshenziswa ama-powder e-barium titanate e-micron-, submicron-, kanye ne-nano-size abonisa umehluko omkhulu ezinqubweni ze-sterolithography (isb., i-LCD-SLA). Njengoba usayizi wezinhlayiya uncipha, i-slurry viscosity iyanda kakhulu, ngama-powders e-nano-size akhiqiza ama-slurry ane-viscosities efinyelela ezigidini zama-mPa·s. Ama-slurry anama-powders e-micron-size athambekele ekuhlukaniseni nasekuqhekekeni ngesikhathi sokuphrinta, kuyilapho ama-powders e-submicron kanye ne-nano-size abonisa ukuziphatha okuzinzile kokwakheka. Ngemva kokushiswa kwezinga lokushisa eliphezulu, amasampula e-ceramic aphumela afinyelele ubuningi obungu-5.44 g/cm³, i-piezoelectric coefficient (d₃₃) engaba ngu-200 pC/N, kanye nezici zokulahlekelwa okuphansi, okubonisa izakhiwo ezinhle kakhulu zokuphendula nge-electromechanical.
Ngaphezu kwalokho, ezinqubweni ze-micro-stereolithography, ukulungisa okuqukethwe okuqinile kwama-slurries ohlobo lwe-PZT (isb., 75 wt.%) kuveze imizimba e-sintered enobukhulu obungu-7.35 g/cm³, kwafinyelela i-piezoelectric constant efinyelela ku-600 pC/N ngaphansi kwamasimu kagesi ahlotshisiwe. Ucwaningo mayelana nokunciphisa ukuguqulwa kwesikali esincane luthuthukise kakhulu ukunemba kokwakheka, lwathuthukisa ukunemba kwejometri ngamaphesenti afinyelela ku-80.
Olunye ucwaningo olwenziwe nge-PMN-PT piezoelectric ceramics lwembule ukuthi okuqukethwe okuqinile kuthinta kakhulu isakhiwo se-ceramic kanye nezakhiwo zikagesi. Ngokuqukethwe okuqinile okungu-80 wt.%, imikhiqizo elandelanayo yavela kalula ku-ceramics; njengoba okuqukethwe okuqinile kwanda kwaya ku-82 wt.% nangaphezulu, imikhiqizo elandelanayo yanyamalala kancane kancane, futhi isakhiwo se-ceramic saba msulwa, ngokusebenza okuthuthukisiwe kakhulu. Ngo-82 wt.%, i-ceramics yabonisa izakhiwo zikagesi ezinhle kakhulu: i-piezoelectric constant engu-730 pC/N, i-relative permittivity engu-7226, kanye nokulahlekelwa yi-dielectric okungu-0.07 kuphela.
Ngamafuphi, usayizi wezinhlayiya, okuqukethwe okuqinile, kanye nezakhiwo ze-rheological zama-slurries e-ceramic akuthinti nje kuphela ukuzinza nokunemba kwenqubo yokuphrinta kodwa futhi kunquma ngokuqondile ubuningi kanye nempendulo ye-piezoelectric yemizimba e-sintered, okwenza kube yimingcele ebalulekile yokufeza i-piezoelectric ceramics esebenza kahle kakhulu ephrintiwe nge-3D.
Inqubo eyinhloko yokuphrinta kwe-LCD-SLA 3D kwamasampula e-BT/UV
Izakhiwo ze-PMN-PT ceramics ezinokuqukethwe okuqinile okuhlukile
IV. Ukuhlanza i-Spark Plasma
I-Spark plasma sintering (SPS) ubuchwepheshe obuthuthukisiwe boku-sintering obusebenzisa i-pulsed current kanye ne-mechanical pressure esetshenziswa ngesikhathi esisodwa kuma-powder ukuze kufezwe ukuminyana okusheshayo. Kule nqubo, i-current ifudumeza ngqo isikhunta kanye ne-powder, ikhiqize ukushisa kwe-Joule kanye ne-plasma, okwenza i-sintering isebenze kahle ngesikhathi esifushane (ngokuvamile kungakapheli imizuzu eyi-10). Ukushisa okusheshayo kukhuthaza ukusabalala kobuso, kuyilapho ukukhishwa kwe-spark kusiza ukususa amagesi afakwe emanzini kanye nezendlalelo ze-oxide ezindaweni ze-powder, kuthuthukiswe ukusebenza kwe-sintering. Umphumela wokufuduka kwe-electromagnetic obangelwa amasimu e-electromagnetic nawo uthuthukisa ukusabalala kwe-athomu.
Uma kuqhathaniswa nokucindezela okushisa kwendabuko, i-SPS isebenzisa ukushisa okuqondile, okuvumela ukuqina kwamazinga okushisa aphansi ngenkathi ivimbela ngempumelelo ukukhula kokusanhlamvu ukuze kutholakale izakhiwo ezincane nezifanayo. Isibonelo:
- Ngaphandle kwezithasiselo, ukusebenzisa i-SiC powder egayiwe njengezinto zokusetshenziswa, ukucwilisa ku-2100°C kanye ne-70 MPa imizuzu engama-30 kuveze amasampula anobuningi obungu-98%.
- Ukushisa ku-1700°C kanye ne-40 MPa imizuzu eyi-10 kukhiqize i-cubic SiC enobukhulu obungu-98% kanye nosayizi wokusanhlamvu ongu-30–50 nm kuphela.
- Ukusebenzisa i-granular SiC powder engu-80 µm kanye ne-sintering ku-1860°C kanye ne-50 MPa imizuzu emi-5 kuholele ku-SiC ceramics esebenza kahle kakhulu enobuningi obungu-98.5%, ubulukhuni be-Vickers obungu-28.5 GPa, amandla okuguquguquka angu-395 MPa, kanye nokuqina kokuqhekeka okungu-4.5 MPa·m^1/2.
Ukuhlaziywa kwesakhiwo se-microstructure kubonise ukuthi njengoba izinga lokushisa lokushisisa likhuphuka lisuka ku-1600°C liya ku-1860°C, ukubhoboka kwezinto kwehla kakhulu, kusondela ekuxineni okugcwele emazingeni okushisa aphezulu.
Isakhiwo esincane se-SiC ceramics esishiswe emazingeni okushisa ahlukene: (A) 1600°C, (B) 1700°C, (C) 1790°C kanye (D) 1860°C
V. Ukukhiqiza Okungeziwe
Ukukhiqiza okungeziwe (i-AM) muva nje kubonise amandla amakhulu ekwakheni izingxenye ze-ceramic eziyinkimbinkimbi ngenxa yenqubo yayo yokwakha ungqimba nongqimba. Kuma-ceramic e-SiC, kuye kwathuthukiswa ubuchwepheshe obuningi be-AM, okuhlanganisa i-binder jetting (BJ), i-3DP, i-selective laser sintering (SLS), ukubhala ngoyinki oqondile (DIW), kanye ne-sterolithography (SL, DLP). Kodwa-ke, i-3DP kanye ne-DIW zinokunemba okuphansi, kuyilapho i-SLS ivame ukubangela ukucindezeleka kokushisa kanye nokuqhekeka. Ngokuphambene nalokho, i-BJ kanye ne-SL zinikeza izinzuzo ezinkulu ekukhiqizeni ama-ceramic ayinkimbinkimbi ahlanzekile kakhulu, anokunemba okuphezulu.
- Ukubopha i-Binder (BJ)
Ubuchwepheshe be-BJ buhilela ukufafaza i-binder ibe yi-bond powder ungqimba ngalunye, kulandelwe ukuhlukanisa nokususa i-sintering ukuze kutholakale umkhiqizo wokugcina we-ceramic. Ukuhlanganisa i-BJ ne-chemical vapor infiltration (CVI), i-SiC ceramics ehlanzekile kakhulu, egcwele i-crystalline yalungiswa ngempumelelo. Inqubo ifaka:
① Ukwakha imizimba eluhlaza ye-SiC ceramic kusetshenziswa i-BJ.
② Ukuqinisa nge-CVI ku-1000°C kanye ne-200 Torr.
③ I-SiC ceramic yokugcina yayinobuningi obungu-2.95 g/cm³, ukuhanjiswa kokushisa okungu-37 W/m·K, kanye namandla okuguquguquka angu-297 MPa.
Umdwebo weskimu wokuphrinta kwejethi yokunamathela (BJ). (A) Imodeli yomklamo osizwa yikhompyutha (CAD), (B) umdwebo weskimu wesimiso se-BJ, (C) ukuphrinta kwe-SiC yi-BJ, (D) ukuminyana kwe-SiC ngokungena kwe-chemical vapor (CVI)
- I-Stereolithography (SL)
I-SL ubuchwepheshe bokwakha i-ceramic obusekelwe ekuphekeni kwe-UV obunokunemba okuphezulu kakhulu kanye namakhono okwakha isakhiwo ayinkimbinkimbi. Le ndlela isebenzisa ama-slurries e-ceramic azwela ukukhanya anokuqukethwe okuphezulu okuqinile kanye ne-viscosity ephansi ukwakha imizimba eluhlaza ye-ceramic ye-3D ngokusebenzisa i-photopolymerization, kulandelwe ukukhishwa kwe-debinding kanye ne-high-temperature sintering ukuthola umkhiqizo wokugcina.
Kusetshenziswa i-slurry engu-35 vol.% SiC, imizimba eluhlaza ye-3D esezingeni eliphezulu yalungiswa ngaphansi kwemisebe ye-UV engu-405 nm futhi yaqiniswa ngokushiswa yi-polymer ku-800°C kanye nokwelashwa kwe-PIP. Imiphumela ibonise ukuthi amasampula alungiselelwe nge-slurry engu-35 vol.% afinyelele ubuningi obungama-84.8%, enza kahle kakhulu kunamaqembu okulawula angu-30% kanye no-40%.
Ngokufaka i-lipophilic SiO₂ kanye ne-phenolic epoxy resin (PEA) ukuze kuguqulwe ukusaphazeka, ukusebenza kwe-photopolymerization kwathuthukiswa ngempumelelo. Ngemva kokusha ku-1600°C amahora ama-4, ukuguqulwa okucishe kuphelele ku-SiC kwafezwa, okuqukethwe komoya-mpilo kokugcina kungu-0.12% kuphela, okuvumela ukwenziwa kwesinyathelo esisodwa kwe-SiC ceramics ehlanzekile kakhulu, eyakhiwe ngendlela eyinkimbinkimbi ngaphandle kwezinyathelo zangaphambi kokushiswa noma zokungena ngaphambi kokungena.
Umfanekiso wesakhiwo sokuphrinta kanye nenqubo yaso yokusila. Ukubonakala kwesampula ngemva kokomiswa ku-(A) 25°C, i-pyrolysis ku-(B) 1000°C, kanye nokusila ku-(C) 1600°C.
Ngokuklama ama-slurries e-ceramic e-Si₃N₄ azwelayo ekunyatheliseni kwe-3D kwe-stereolithography nokusebenzisa izinqubo zokuguga ze-debinding-presintering kanye ne-high-temperature, kwalungiswa ama-ceramic e-Si₃N₄ anobuningi obungu-93.3% bethiyori, amandla okuthamba angu-279.8 MPa, kanye namandla e-flexural angu-308.5–333.2 MPa. Izifundo zithole ukuthi ngaphansi kwezimo zokuqukethwe okuqinile okungu-45 vol.% kanye nesikhathi sokuchayeka semizuzwana eyi-10, imizimba eluhlaza enesendlalelo esisodwa enokunemba kokwelapha kwezinga le-IT77 ingatholakala. Inqubo yokususa ukushisa okuphansi enesilinganiso sokushisa esingu-0.1 °C/min isize ekukhiqizeni imizimba eluhlaza engenamaqhubu.
Ukusinta kuyisinyathelo esibalulekile esithinta ukusebenza kokugcina ku-sterolithography. Ucwaningo lubonisa ukuthi ukwengeza izinsiza zokusinta kungathuthukisa ngempumelelo ubuningi be-ceramic kanye nezakhiwo zemishini. Ukusebenzisa i-CeO₂ njengosizo lokusinta kanye nobuchwepheshe bokusinta obusizwa yinsimu kagesi ukulungiselela i-Si₃N₄ ceramics enamandla aphezulu, i-CeO₂ itholakale ihlukanisa emingceleni yokusanhlamvu, ikhuthaza ukushelela komngcele wokusanhlamvu kanye nokuqina. I-ceramics ephumela ibonise ubulukhuni be-Vickers be-HV10/10 (1347.9 ± 2.4) kanye nokuqina kokuqhekeka kwe-(6.57 ± 0.07) MPa·m¹/². Nge-MgO–Y₂O₃ njengezithasiselo, i-homogeneity yesakhiwo se-ceramic microstructure yathuthukiswa, yathuthukisa kakhulu ukusebenza. Ezingeni eliphelele le-doping elingu-8 wt.%, amandla okuguquguquka kanye nokuqhuba kokushisa kwafinyelela ku-915.54 MPa kanye no-59.58 W·m⁻¹·K⁻¹, ngokulandelana.
VI. Isiphetho
Ngamafuphi, i-silicon carbide (SiC) ceramics ehlanzekile kakhulu, njengezinto zobumba zobunjiniyela ezivelele, ibonise amathuba amaningi okusetshenziswa kuma-semiconductors, ezindizayo, kanye nemishini yesimo esibi kakhulu. Leli phepha lihlaziye ngokuhlelekile izindlela ezinhlanu zokulungiselela i-SiC ceramics ehlanzekile kakhulu—ukuncibilikisa kabusha i-crystallization, ukuncibilikisa okungenangcindezi, ukucindezela okushisayo, ukuncibilikisa i-spark plasma, kanye nokukhiqizwa okungeziwe—ngezingxoxo eziningiliziwe ngezindlela zazo zokuqina, ukwenza ngcono amapharamitha ayisihluthulelo, ukusebenza kwezinto, kanye nezinzuzo kanye nemikhawulo efanele.
Kusobala ukuthi izinqubo ezahlukene ngayinye inezici ezihlukile maqondana nokufinyelela ubumsulwa obuphezulu, ubuningi obukhulu, izakhiwo eziyinkimbinkimbi, kanye nokusebenza kwezimboni. Ubuchwepheshe bokukhiqiza obungeziwe, ikakhulukazi, bubonise amandla amakhulu ekwakheni izingxenye ezibunjwe ngendlela eyinkimbinkimbi futhi ezenziwe ngokwezifiso, kanye nokuthuthukiswa ezindaweni ezincane ezifana ne-sterolithography kanye ne-binder jetting, okwenza kube isiqondiso esibalulekile sokuthuthukiswa kokulungiselela i-SiC ceramic ehlanzekile kakhulu.
Ucwaningo lwesikhathi esizayo mayelana nokulungiswa kwe-SiC ceramic okuhlanzekile kakhulu ludinga ukuhlolisisa ngokujulile, lukhuthaze ukuguquka kusuka elabhorethri kuya ezinsizeni zobunjiniyela ezinkulu nezinokwethenjelwa kakhulu, ngaleyo ndlela lunikeze ukwesekwa kwezinto ezibalulekile ekukhiqizweni kwemishini ephezulu kanye nobuchwepheshe bolwazi besizukulwane esilandelayo.
I-XKH iyinkampani yobuchwepheshe obuphezulu egxile ocwaningweni nasekukhiqizweni kwezinto zobumba ezisebenza kahle kakhulu. Izinikele ekuhlinzekeni izixazululo ezenziwe ngokwezifiso kumakhasimende ngesimo sobumba be-silicon carbide (SiC) obuhlanzekile kakhulu. Le nkampani inobuchwepheshe obuthuthukisiwe bokulungiselela izinto kanye namakhono okucubungula anembile. Ibhizinisi layo lihlanganisa ucwaningo, ukukhiqiza, ukucubungula okunembile, kanye nokwelashwa kwendawo yobumba be-SiC obuhlanzekile kakhulu, ukuhlangabezana nezidingo eziqinile ze-semiconductor, amandla amasha, izindiza kanye neminye imikhakha yezingxenye zobumba ezisebenza kahle kakhulu. Sisebenzisa izinqubo zokushisa ezivuthiwe kanye nobuchwepheshe bokukhiqiza obungeziwe, singanikeza amakhasimende insizakalo eyodwa kusukela ekwenzeni ngcono ifomula yezinto, ukwakheka kwesakhiwo esiyinkimbinkimbi kuya ekucutshungulweni okunembile, ukuqinisekisa ukuthi imikhiqizo inezakhiwo ezinhle kakhulu zemishini, ukuzinza kokushisa kanye nokumelana nokugqwala.
Isikhathi sokuthunyelwe: Julayi-30-2025